Preparation of GaS Thin Films by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
Layered semiconductor GaS thin films have been grown by molecular beam epitaxy on hydrogen-terminated Si(111) and GaSe(0001) substrates. Elemental sulfur is so volatile that we used a valved cell as a sulfur source. Two〜100 monolayer of GaS films were obtained which have sharp reflection high-energy electron diffraction (RHEED) patterns. The GaS thin film grown on GaSe(0001) was a single-domain one, whereas that on hydrogen-terminated Si(111) was a multidomain one. Both films have been proved to be stoichiometric and to have the same electronic structure as that of the bulk Gap.
- 社団法人応用物理学会の論文
- 1996-05-01
著者
-
Yamada Hiroyuki
Department Of Cardiovascular Medicine Kyoto Prefectural University Of Medicine
-
Ueno Keiji
Department Of Chemistry Faculty Of Engineering Gunma University
-
Ueno Keiji
Department Of Chemistry The University Of Tokyo
-
Koma Atsushi
Department Of Applied Physics University Of Tokyo
-
Yamada Hiroyuki
Department Of Anatomy School Of Dentistry Aichi-gakuin University
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