Accumulation and Depletion Layer Thicknesses in Organic Field Effect Transistors
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概要
- 論文の詳細を見る
We present a simple but powerful method to determine the thicknesses of the accumulation and depletion layers and the distribution curve of injected carriers in organic field effect transistors. The conductivity of organic semiconductors in thin film transistors was measured in situ and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. Using this method, the thicknesses of the accumulation and depletion layers of pentacene were determined to be 0.9 nm ($V_{\text{G}}{=}-15$ V) and 5 nm ($V_{\text{G}}{=}15$ V), respectively.
- Japan Society of Applied Physicsの論文
- 2003-12-01
著者
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NAKAYAMA Manabu
Department of Complexity Science & Engineering, Graduate School of Frontier Sciences, The University
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Saiki Koichiro
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Shimada Toshihiro
Department Of Chemistry School Of Science The University Of Tokyo
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Ueno Keiji
Department Of Chemistry Faculty Of Engineering Gunma University
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Fujiwara Kohei
Department Of Advanced Materials University Of Tokyo
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Kiguchi Manabu
Department Of Chemistry Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Ueno Keiji
Department of Chemistry, Faculty of Science, Saitama University, Sakura-ku, Saitama, Saitama 338-8570, Japan
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Fujiwara Kohei
Department of Advanced Materials and Department of Applied Chemistry, University of Tokyo, Kashiwa, Chiba 277-8561, Japan
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Kiguchi Manabu
Department of Complexity Science & Engineering, Graduate School of Frontier Sciences, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan
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Shimada Toshihiro
Department of Chemistry, Graduate School of Science, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan
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