Correlation between Gap States and Off-current in Pentacene Field-effect Transistors Observed by Sub-band-gap Photocurrent–Voltage Measurement
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概要
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We report the correlation between sub-band-gap photocurrent and various device parameters of polycrystalline pentacene field-effect transistors. It was revealed that we can estimate various device characteristics including the origin of photocarriers and the density of gap states by changing the gate bias and drain voltage during the photocurrent measurement. In our experiment, carrier mobility was not related to photocurrent in the sub-band-gap region, even though a large photocurrent implies a large number of trapping states. The off-current obviously correlates with the photocurrent, suggesting that the origin of the off-currents is the gap states widely distributed near the valence band edge.
- Japan Society of Applied Physicsの論文
- 2007-09-25
著者
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Shimada Toshihiro
Department Of Chemistry School Of Science The University Of Tokyo
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Ohtomo Manabu
Department Of Materials Chemistry Faculty Of Engineering Hokkaido University
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Hasegawa Tetsuya
Department Of Applied Chemistry Himeji Institute Of Technology
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Hasegawa Tetsuya
Department of Chemistry, Graduate School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
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Ohtomo Manabu
Department of Chemistry, Graduate School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
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