Carrier Doping into SrFeO2 Epitaxial Thin Films by Eu-Substitution
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概要
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In this study, we fabricated Eu-substituted SrFeO2 (Sr1-xEuxFeO2; Eu:SrFeO2) epitaxial thin films with an infinite-layer structure via solid-phase reduction of Sr1-xEuxFeO3-\delta precursor films grown by pulsed laser deposition. The Eu:SrFeO2 ($x = 0.10$) film showed resistivity as low as ${\sim}0.15$ $\Omega$ cm at room temperature, which is approximately four orders of magnitude lower than that of undoped SrFeO2. Hall measurements confirmed that n-type (electron) carriers were responsible for the semiconductor-like electric conduction in Eu:SrFeO2. We also observed a large negative magnetoresistance of 78% at 2 K in the Eu:SrFeO2 ($x = 0.10$) film.
- 2011-01-25
著者
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CHIKAMATSU Akira
Department of Applied Chemistry, The University of Tokyo
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Hirose Yasushi
Department Of Advanced Materials Science Graduate School Of Frontier Sciences The University Of Toky
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Hasegawa Tetsuya
Department Of Applied Chemistry Himeji Institute Of Technology
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Fukumura Tomoteru
Department of Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-0033, Japan
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Matsuyama Toshiya
Department of Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-0033, Japan
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Chikamatsu Akira
Department of Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-0033, Japan
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