Preparation of Atomically Flat TiO2(110) Substrate
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概要
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The temperature dependence of step/terrace surfaces of rutile TiO2(110) substrates, prepared by chemical etching and thermal annealing, was examined by scanning tunneling microscopy, low-energy electron diffraction, and Auger electron spectroscopy in ultrahigh vacuum. Whereas disordered step/terrace structures appeared when the sample was heated at temperatures in the range 675–850 °C, we have succeeded in obtaining atomically flat and clean TiO2(110) ($1{\times}1$) surfaces following annealing at 900 °C. Additional heating of the atomically-ordered surfaces at lower temperatures induced no structural changes. This simple approach is an important starting point for the further growth of oxide epitaxial layers.
- 2009-12-25
著者
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Nakayama Koji
World Premier International Research Center Advanced Institute For Materials Research Tohoku Univers
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Hasegawa Tetsuya
Department Of Applied Chemistry Himeji Institute Of Technology
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Nakayama Koji
World Premier International Research Center Initiative, Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, Japan
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Shimizu Ryota
World Premier International Research Center Initiative, Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, Japan
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Hitosugi Taro
World Premier International Research Center Initiative, Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, Japan
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Sakurai Toshio
World Premier International Research Center Initiative, Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, Japan
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Shiraiwa Manabu
Department of Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-0033, Japan
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Hashizume Tomihiro
World Premier International Research Center Initiative, Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, Japan
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