Carrier Compensation by Excess Oxygen Atoms in Anatase Ti0.94Nb0.06O2+δ Epitaxial Thin Films

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概要

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• We report the effect of post-deposition annealing on the electrical transport properties of anatase Ti0.94Nb0.06O2 (TNO) epitaxial thin films. Annealing TNO films in pure oxygen drastically suppressed the carrier density ($n_{\text{e}}$). A high $n_{\text{e}}$ of the order of $10^{21}$ cm-3 was recovered by successive annealing in pure hydrogen. Core-level X-ray photoemission spectroscopy revealed that Ti and Nb respectively exist as tetravalent and pentavalent ions in fully oxidized samples. The concentration of Nb5+ relative to that of Nb4+ tends to increase with O2 annealing, suggesting that carriers released by Nb donors are compensated by electron-killing impurity states created by O2 annealing. Based on these findings, we propose that excess oxygen atoms incorporated by O2 annealing occupy interstitial sites and behave as deep acceptor states, which compensate electron carriers generated by Nb doping. Resonant valence-band photoemission spectroscopy directly confirmed the formation of deep acceptor states associated with oxygen annealing.

• 2010-04-25

著者

• CHIKAMATSU Akira

  Department of Applied Chemistry, The University of Tokyo

• Hitosugi Taro

  Wpi-advanced Institute For Materials Research Tohoku University

• Nogawa Hiroyuki

  Department Of Biology Faculty Of Science Chiba University

• Hiroshi Kumigashira

  Department of Applied Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

• Shoichiro Nakao

  Kanagawa Academy of Science and Technology, Sakado, Takatsu-ku, Kawasaki 213-0012, Japan

• Yasushi Hirose

  Department of Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-0033, Japan

• Toshihiro Shimada

  Department of Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-0033, Japan

• Masaharu Oshima

  Department of Applied Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

• Tetsuya Hasegawa

  Department of Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-0033, Japan

• Hiroyuki Nogawa

  Department of Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-0033, Japan

• Taro Hitosugi

  WPI-Advanced Institute for Materials Research, Tohoku University, 2-2-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

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