Molecular Beam Epitaxy of SnSe_2 : Chemistry and Electronic Properties of Interfaces
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概要
- 論文の詳細を見る
A layered material SnSe_2 was grown epitaxially on various layered materials (MoS_2, NbSe_2, graphite), while reacting with Al_2O_3(0001) substrates. The films were characterized by means of X-ray photoemission spectroscopy, reflection high energy electron diffraction, and scanning tunneling microscopy. The observed band bending was consistent to the work function difference between the film and the substrate, indicating the Schottky limit property of the junctions. Applications of this system are discussed.
- 社団法人応用物理学会の論文
- 1993-03-15
著者
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KOMA Atsushi
Department of Chemistry, The University of Tokyo
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SHIMADA Toshihiro
Department of Chemistry, Graduate School of Science, The University of Tokyo
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Shimada Toshikazu
Electronics Research Laboratory Nissan Motor Co. Ltd.
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OHUCHI Fumio
Department of Physics, Sophia University
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Ohuchi F
E. I. Du Pont De Nemours & Co. De Usa
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Ohuchi Fumio
Department Of Materials Science And Engineering University Of Washington
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Shimada T
Presto Japan Science And Technology Corporation (jst) And Department Of Chemistry The University Of
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Shimada Toshihiro
Department Of Chemistry School Of Science The University Of Tokyo
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Koma Atsushi
Department Of Applied Physics University Of Tokyo
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