Epitaxial Growth of ZnSe on Si (111) with Lattice-Matched Layered InSe Buffer Layers
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概要
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The growth of thick ZnSe films with high crystalline quality on a Si substrate is impaired by the 4.4% lattice mismatch at the interface. Based on the concept of van der Waals epitaxy, an InSe buffer layer was inserted between ZnSe and Si. The three-monolayer-thick buffer layer was grown by molecular beam epitaxy on a hydrogen-terminated Si (111) substmate. Despite a lattice mismatch of 4.2%, the InSe film grew with high crystalline quality and without lattice distortions. ZnSe was subsequently grown on the InSe layer. The lattice mismatch of 0.2% at this interface appeared to be favorable for the growth of high-quality ZnSe films. In situ reflection high-energy electron diffraction and ex situ atomic force microscopy studies in the thin-film growth regime are presented.
- 社団法人応用物理学会の論文
- 1998-09-15
著者
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Koma Atsushi
Department Of Applied Physics University Of Tokyo
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LOHER Thomas
Department of Chemistry, The University of Tokyo
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