Van der Waals Epitaxial Growth of C_<60> Film on a Cleaved Face of MoS_2
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概要
- 論文の詳細を見る
C_<60> film has been grown heteroepitaxially on a cleaved face of MoS_2 by means of van der Waals epitaxy. The C_<60> film forms a close-packed structure with its principal crystal axes parallel to those of the substrate. Although the lattice constant of the C_<60> crystal is much larger than that of MoS_2, good heteroepitaxial growth becomes possible because of the van der Waals-type interaction between the grown film and the substrate.
- 社団法人応用物理学会の論文
- 1991-11-01
著者
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Tada H
Graduate School Of Engineering Science Osaka University
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Tada Hirokazu
Matsushita Techno Research Co. Ltd.
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Saiki Koichiro
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Koma Atsushi
Department Of Applied Physics University Of Tokyo
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Tada Hirokazu
Department Of Chemistry University Of Tokyo
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Sakurai Masatoshi
Department Of Chemistry University Of Tokyo
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