Electrical Properties of LiF/Ag(001) Heterostructure
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概要
- 論文の詳細を見る
Breakdown properties of thin insulating films of LiF were studied by the 2-probe method in vacuum. A LiF film was found to grow heteroepitaxially on a Ag(001) substrate at 700 K, while an amorphous LiF film grew at room temperature. The breakdown strength depended on the crystallinity of LiF, but was not related to the film thickness. The single-crystalline LiF films could work up to higher electric fields than the conventional insulator films.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-07-15
著者
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Saiki Koichiro
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Koma Atsushi
Department Of Applied Physics University Of Tokyo
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Chiaki Tomohiko
Department of Chemistry, Graduate School of Science, Univerity of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
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Kiguchi Manabu
Depertment of Complexity Science & Engineering, Graduate School of Frontier Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
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Saiki Koichiro
Department of Chemistry, Graduate School of Science, Univerity of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
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Koma Atsushi
Department of Chemistry, Graduate School of Science, Univerity of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
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