A novel method to fabricate a molecular quantum structure: Selective growth of C-60 on layered material heterostructures
スポンサーリンク
概要
- 論文の詳細を見る
We propose a new method to fabricate nano-scale devices consisting of C-60. C-60 molecules have a spherical shape with a diameter of 0.7 nm. It may be possible to consider each molecule as a quantum dot to fabricate a single-electron-tunneling device which will work at room temperature. In order to control the position of a C-60 molecule on a device substrate, we have developed a "selective growth" technique on layered material heterostructure substrates, which utilizes the difference in the nucleation process of C-60 molecules on various kinds of layered materials. To clarify the selective,growth mechanism, the density of C-60 islands grown on different layered material substrates was measured using atomic force microscopy. It has been suggested that differences in the adsorption and diffusion energies of a C60 molecule on layered materials influence the selective growth.
- 社団法人応用物理学会の論文
- 1999-01-30
著者
-
UENO Keiji
Department of Chemistry, Faculty of Engineering, Gunma University
-
上野 啓司
埼玉大理
-
KOMA Atsushi
Department of Chemistry, The University of Tokyo
-
SAIKI Koichiro
Department of Chemistry, The University of Tokyo
-
小間 篤
Department Of Chemistry The University Of Tokyo
-
笹木 敬司
北海道大学電子科学研究所
-
SASAKI Kentaro
Department of Chemistry, The University of Tokyo
-
Saiki Koichiro
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
-
Ueno Keiji
Department Of Chemistry Faculty Of Engineering Gunma University
-
Koma Atsushi
Department Of Applied Physics University Of Tokyo
関連論文
- 研究ニュース
- Sulfur-Bridged Dinuclear and Tetranuclear Complexes Consisting of cis-[Ru(bpy)_2]^ and cis-[Ni(aet)_2] Units
- 25aS-4 La@C_薄膜の電子エネルギー損失スペクトル
- 19pPSB-23 絶縁体薄膜/金属単結晶界面のバンドアライメント
- 28aYQ-1 MgO(100)/Ag(100)界面の構造及び電子状態
- 27aWB-5 SiO_2上に成長したペンタセン薄膜の成長初期過程における分子配向(表面・界面構造, ダイナミクス,領域9(表面・界面, 結晶成長))
- 26pXC-7 重合方向を制御した長鎖ジアセチレン誘導体LB膜のNEXAFS解析(表面・界面構造(シリコン表面),領域9(表面・界面, 結晶成長))
- 26pYK-6 有機FETのtime of flight移動度測定(FET,領域7(分子性固体・有機導体))
- Scanning Tunneling Microscopy and Spectroscopy Study of LiBr/Si(001) Heterostructure
- Accumulation and Depletion Layer Thicknesses in Organic Field Effect Transistors
- 22pXG-2 ペンタセン薄膜における電界効果移動度の膜厚依存性
- 表面不活性化シリコン基板上における異方的有機薄膜成長
- 31aWD-13 LiBr 超薄膜の STM 観察
- 表面不活性基板を利用した有機・無機ナノ構造の形成(ナノ結晶)
- 29pPSA-31 Bilayer-GaSe終端Si(111)表面のSTM観察
- 層状物質基板
- 24pPSA-28 Bilaye-GaSe上に形成したGa量子ドットの電子分光
- 24pPSA-24 Bilayer-GaSe終端Si(111)基板の表面構造解析と薄膜成長への応用
- 22aWA-7 C_/Si(111)系におけるC(1s)内殻励起スペクトル
- OME2000-51 異種原子終端Si基板上でのフラーレン分子のエピタキシー
- 23aT-6 MoS_2基板上III-VI層状化合物半導体超薄膜の成長機構
- 22aW-5 (C_,K)/Si(111)系の電子エネルギー損失スペクトル
- 26aPS-34 Si基板上へのGa_2Se_3薄膜のエピタキシャル成長と電子分光測定
- 26aPS-13 Si(111)-√x√Ag表面上に作製したC_単層膜の高分解能電子エネルギー損失スペクトル
- 24aZ-6 Si(111)-7×7および(100)-2×1表面上に作製したC_単層膜の電子エネルギー損失スペクトル
- 30p-BPS-2 ヘテロエピタキシャル成長した層状物質のSTMによる評価
- 研究紹介
- 研究ニュース
- 13pWH-8 高誘電率ゲート酸化膜を用いた有機 FET の動作特性(FET, 領域 8)
- 13pWH-8 高誘電率ゲート酸化膜を用いた有機 FET の動作特性(FET, 領域 7)
- 20pYC-14 アルカリハライド/金属ヘテロ構造の STM 観察
- 22pXG-1 異方的成長条件下で成長したペンタセン薄膜を用いた有機 FET
- Metal-induced gap states at well defined alkali-halide/metal interfaces.
- 31pWD-6 金属上に成長したオリゴチオフェンの構造および電子状態 II
- 31pWD-5 金属上に成長したオリゴチオフェンの構造および電子状態 I
- 31aZE-7 Cu(110) 表面上ペンタセン薄膜の構造と電子状態
- 28pPSB-21 アルカリハライド/金属界面の構造と電子状態
- Dynamic and Static Disorder of Alkali Halide Solid Solutions studied by Temperature-dependent Extended X-Ray-Absorption Fine Structure
- 19pWD-4 金属単結晶基板上のアルカリ-ハライドのエピタキシャル成長
- 19pWD-3 複合ヘテロ構造によるGaAs(001)基板上へのCoO単結晶薄膜の作製
- 19aTF-12 メチル終端Si(111)表面の電子分光
- 19aRH-3 (C_, In)/Si(111)系における電子状態
- 17aTF-6 変調分子線散乱法を用いた微傾斜基板表面上での有機分子拡散過程の解析
- 29pPSA-17 Cu(100)上のLiClヘテロエピタキシャル膜の電子構造
- 27aY-7 Si単結晶表面上でのNiOの分解
- 29a-L-5 HgBa_2CuO_の光電子分光
- 28p-S-8 Si, GaAs基板上への岩塩型酸化物の成長
- 26p-YR-7 Si(111)面上へのMgのエピタキシャル成長
- 26p-YR-5 高感度RHEED法によるアルカリハライドヘテロ構造の評価
- OME2000-50 金属内包フラーレンのエピタキシャル成長と電子状態
- 24aF-11 KドープC_薄膜の内殻励起電子エネルギー損失スペクトル
- 31a-S-12 不活性基板表面上に成長したC-単層膜の電子エネルギー損失スペクトル
- 27a-PS-64 層状物質基板上エピタキシャルC_薄膜の構造解析
- Scanning Tunneling Microscope Observation of the Metal-Adsorbed Layered Semiconductor Surfaces
- Heteroepitaxial Growth of Layered GaSe Films on GaAs(001) Surfaces
- Heteroepitaxy of Layered Semiconductor GaSe on a GaAs (111) B Surface
- Molecular layer-by-layer growth of C-60 thin films by continuous-wave infrared laser deposition
- Characterization of Ultrathin CaF_2 Films Heteroepitaxially Grown on Si(111) Surfaces : Surfaces, Interfaces and Films
- 27p-PSA-7 ヘテロ成長した層状物質のHREELSによる評価
- A 0.7-μm-Pitch Double Level Al Interconnection Technology for 1-Gbit DRAMs using SiO_2 Mask Al Etching and Plasma Enhanced Chemical Vapor Deposition SiOF
- A Reliable Double Level Interconnection Technology for Giga Bit DRAMs Using SiO_2 Mask Al Etching and PECVD SiOF
- A novel method to fabricate a molecular quantum structure: Selective growth of C-60 on layered material heterostructures
- X-Ray Photoemission Spectroscopy Study for the Flat YBa_2Cu_3O_y Single-Crystal Surface Prepared by Chemical Etching and O_2 Annealing
- Characterization of Epitaxial Films of Layered Materials Using Moire Images of Scanning Tunneling Microscope
- Synthesis and Structure of a Base-stabilized Silyl(silylene)tantalum Complex
- Synthesis and Characterization of Triplet Germylene-bridged Diiron Complexes and Singlet Stannylene-bridged Diiron Complexes
- Synthesis and Structure of the Cationic External Donor - Stabilized Silyleneiron Complex [ Cp(OC)_2 Fe = Si(p - Tol)_2・HMPA] PF_6 by Hydride Abstraction from a (Hydrosilyl)iron Complex
- Formation of Acylyron Complexes CpFe(CO){P(OR')_3}COR' by Reaction of Silyliron Complexes CpFe(CO)_2SiR_3 with Alkylphosphites P(OR')_3
- Reactions of[Chloro(1, 2-phenylenedioxy)silyl]iron Complex Cp(CO)_2FeSiCl(ο-O_2C_6H_4)with Nucleophiles
- Synthesis of the First Iron Complexes Containing 1, 2-Phenylenedioxysilyl Group
- Studies on an (NH_4)_2S_x-Treated GaAs Surface Using AES, LEELS and RHEED
- Evaluation of [111]-Textured Cu Layer Formed on Thin Nb Barrier Layer on SiO_2(Session 8A Silicon Devices V,AWAD2006)
- Evaluation of [111]-Textured Cu Layer Formed on Thin Nb Barrier Layer on SiO_2(Session 8A Silicon Devices V)
- Formation of Preferentially Oriented Cu [111] Layer on Nb [110] Barrier on SiO_2
- Photoassisted Electrochemical Deposition of Copper from a Bathocuproin Complex
- Electrical Properties of LiF/Ag(001) Heterostructure
- Structural Analyses of Cu[111] Layer on Nb[110] Barrier Formed on SiO_2(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
- Fabrication of GaAs quantum dots on a bilayer-GaSe terminated Si(111) substrate
- 24aZ-1 アルカリハライド/半導体ヘテロ接合の光電子イールド測定(II)
- 28p-S-9 アルカリハライド/半導体ヘテロ接合の光電子イールド測定
- 表面を選ぶサッカーボール
- 26p-YR-6 MoS_2基板上InSeヘテロエピタキシャル超薄膜の成長機構
- 選択成長法による分子性結晶ナノ構造の形成
- 7a-PS-58 層状物質基板上での有機分子性結晶選択成長
- Nanostructure fabrication using selective growth on nanosize patterns drawn by a scanning probe microscope
- 31a-T-12 2D layered material buffer layers in large lattice mismatch heterostructures:The system CdS/InSe/Si
- 29a-PS-31 ヘテロ成長したIII-VI層状化合物半導体薄膜表面のSPM観察
- C_エピタキシャル薄膜の初期成長過程
- Heteroepitaxial Growth of Layered Semiconductor GaSe on a Hydrogen-Terminated Si(111) Surface
- 29p-PS-18 水素終端処理したSi基板上へのファンデアワールス・エピタキシー
- LMM and LVV Auger Electrons Induced by Ar^+ Ion Impact on a Si Surface
- Synthesis and Structures of the First Titanium(IV) Complexes with Cyclic Tetrasiloxide Ligands : Incomplete and Complete Cage Titanosiloxanes
- Kinetic Study of interconversion between Two Geometrical Isomers of the Methoxy-Bridged Bis(silylene)iron Complex, (η-C_5Me_5)(OC)Fe{(SiMe_2)・・・OMe・・・(SiMeOMe)}
- Synthesis of a Cofacial Schiff-Base Dimanganese(III) Complex for Asymmetric Catalytic Oxidation of Sulfides
- Photolysis of CpFe(CO)_2SiMe_2H in the Presence of Methanol. Indirect Evidence for the Transient Formation of a Disileneiron Complex
- Reactivity of Alkoxy-bridged Bis(silylene)iron Complexes
- Synthesis of a Donor-Stabilized Silyl(silylene)iron Complex. Direct Observation of 1, 3-Methyl Migration from Silyl to Silylene Ligands
- Molecular Beam Epitaxy of SnSe_2 : Chemistry and Electronic Properties of Interfaces
- RHEED Intensity Oscillation during Epitaxial Growth of Layered Materials
- Low-Energy Electron Energy Loss Spectroseopy on CaF_2(111) Surfaces