A Complex Heterostructure to Achieve a Single-Crystalline MgO Film on GaAs (001)
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概要
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A single-crystalline MgO film was grown on GaAs (001) by constructing a complex heterostructure with two alkali halide buffer layers. The growth temperature was decreased to 150℃ as compared with direct growth of MgO on GaAs (001). Electron energy loss spectrum of the grown film agreed well with that of bulk MgO, indicating that surface stoichiometry was maintained. The structure was stable up to 600℃ against heating in UHV condition. The concept of a complex heterostructure will help fabrication of functional oxide layers on GaAs substrates and lead to oxide/semiconductor integrated devices.
- 社団法人応用物理学会の論文
- 1998-12-01
著者
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Saiki Koichiro
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Koma Atsushi
Department Of Applied Physics University Of Tokyo
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NISHITA Kouichi
Department of Chemistry, University of Tokyo
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Nishita K
Department Of Chemistry University Of Tokyo
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Nishita Kouichi
Department Of Chemistry University Of Tokyo
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Koma Atsushi
Department of Chemistry, University of Tokyo
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