Electron Double Resonance of Ionized Impurity-Pairs in Silicon. II
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概要
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The behaviour of the split peaks in the presence of the pump microwave observed in the electron double resonance for the ionized donor-pairs in silicon is discussed by introducing the interaction between the impurity-pairs. The interaction is the fluctuating electric field on the homopolar pair arising from the hopping of the carriers in the surrounding polar pairs. Numerical calculations of the kinetic equations showed that the intensity of the resonance peaks increases by several orders of magnitude compared with that on the non-interacting pair model, and a good agreement with the experimental results were obtained. From the observed splitting the mean distance between the homopolar pair and the most effective hopping pair was estimated as about twice as large as the mean distance between the impurity-pairs in the sample.
- 社団法人日本物理学会の論文
- 1967-06-05
著者
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Koma Atsushi
Department Of Applied Physics University Of Tokyo
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Tanaka Shoji
Department Of Applied Physics Faculty Fo Engineering University Of Tokyo
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