Integrated Radiation Detectors with a-Si Photodiodes on Ceramic Scintillators

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1989-08-20

著者

• Shimada Toshikazu

  Electronics Research Laboratory Nissan Motor Co. Ltd.

• Itoh Hisayoshi

  Institute Of Materials Science University Of Tsukuba

• Itoh H

  Semiconductor Academic Research Center

• SHIMADA Toshikazu

  Central Research Laboratory, Hitachi Ltd.

• Itoh Hitoshi

  Semiconductor Academic Research Center

• TAKEUCHI Hiroshi

  Central Research Laboratory, Hitachi Ltd.

• Muramatsu S

  Univ. Tokyo Tokyo Jpn

• MATSUBARA Sunao

  Central Research Laboratory, Hitachi Ltd.

• ITOH Haruo

  Central Research Laboratory, Hitachi Lid.

• TAKAHASHI Tetsuhiko

  Central Research Laboratory, Hitachi, Ltd.

• Matsubara Sunao

  Central Research Laboraotry

• Shimada T

  Presto Japan Science And Technology Corporation (jst) And Department Of Chemistry The University Of

• Muramatsu S

  Hitachi Cable Ltd. Ibaraki Jpn

• Takahashi Tetsuhiko

  Central Research Laboratory Hitachi Ltd.

• Takahashi Tetsuhiko

  Central Research Laboratory Hitachi Ltd Po Box 2

• Shimada Toshikazu

  Central Research Laboratory

• Itoh Haruo

  Central Research Laboratory Hitachi Ltd.

• Takeuchi Hiroshi

  Central Research Laboratory Hitachi Ltd.

• Takeuchi Hiroshi

  Central Research Lab. Hitachi Lid.

関連論文

• Atomic Migration of Metals in the Interfaces of Au-Si and Ni-Si for Crystalline and Amorphous Si Observed by 40 MeV-O^ Ion Backscattering
• Preparation of a-Si_N_x:H Film Using N_2 Microwave Afterglow Chemical Vapor Deposition Method
• Generation Mechanism of Tensile Stress in a-Si_N_x Films Prepared by Afterglow Plasma Chemical Vapor Deposition Technique
• Residual Stress of a-Si_N_x:H Films Prepared by Afterglow Plasma Chemical Vapor Deposition Technique
• High-Intensity Vacuum Ultraviolet Light Source in Windowless Photochemical Vapor Deposition Reactor and Its Application to a-Si:H Deposition
• Electro- and Thermomigration of Metallic Islands on Si(100) Surface
• Ion-Induced Anger Electrons Emitted from MgO and GaP under Shadowing Conditions
• Anger Electron Emission under Jon-Beam Shadowing Conditions
• Effects of Electrode Geometry on Breakdown Voltage of a Single-Gap Pseudospark Discharge
• Large-Area MOVPE Growth of AlGaAs/GaAs Heterostructures for HEMT LSIs
• MOVPE Growth of AlGaAs /GaAs Heterostructures for HEMT LSI
• Application of Gd_2O_2S Ceramic Scintillator for X-Ray Solid State Detector in X-Ray CT : Techniques, Instrumentations and Measurement
• Hot Isostatic Pressed Gd_2O_2S:Pr, Ce, FTranslucent Scintillator Ceramics for X-Ray Computed Tomography Detectors : Condensed Matter
• Multi-Wafer Growth of HEMT LSI Quality AlGaAs/GaAs Heterostructures by MOCVD
• Effects of Electrode Geometry and Gas Pressure on Breakdown Voltage of a Pseudospark Discharge
• Crystal and Electrical Characterizations of Oriented Yttria-Stabilized Zirconia Buffer Layer for the Metal/Ferroelectric/Insulator/Semiconductor Field-Effect Transistor
• Thermal Properties of Various Ta Precursors Used in Chemical Vapor Deposition of Tantalum Pentoxide
• Interaction of PbTiO_3 Films with Si Substrate ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
• Effect of Atomic and Molecular Hydrogen Irradiation on Ge Surface Segregation during Si Molecular Beam Epitaxy
• c-Axis-Oriented Pb(Zr, Ti)O_3 Thin Films Prepared by Digital Metalorganic Chemical Vapor Deposition Method
• Preparation of Tetragonal Perovskite Single Phase PbTiO_3 Film Using an Improved Metal-Organic Chemical Vapor Deposition Method Alternately Introdueing Pb and Ti Precursors
• Microstructure of Visible Light Emitting Porous Silicon
• Persistent Spectral Hole-Burning in Semi-Crystalline Matrices Doped with Tetraphenylporphine
• Fine Structure of Porous Si with Visible Photoluminescence
• Classification of Inhomogeneities in Hydrogenated Amorphous Silicon
• Reduction of Gap State Density in a-SiGe:H Alloys
• Tantalum Oxide Films Formed by UV Photo-CVD Using Ozone and TaCl_5
• Mobility-Lifetime Product in Hydrogenated Amorphous Silicon
• Gap States in a-SiGe:H Examined by the Constant Photocurrent Method
• Single-Target Sputtering Process for Lead Zirconate Titanate Thin Films with Precise Composition Control
• Acoustic Properties of Lens Materials for Ultrasonic Probes
• Current-Voltage Characteristics Including Breakdown Voltage for Au ZnO/Au/Fused Quartz Structure
• Sm-Substiuted Lead Titanate Ceramics for High Frequency Ultrasonic Probes : V: PIZOELECTRIC VIBRATOR
• Fast and Efficient Photon-Gated Burning of Persistent Spectral Holes in Donor-Acceptor Electron Transfer Systems
• Photochemical Hole Burning in Highly Doped TPP/PMMA Systems. Energy Migration and Stabilization of Burnt Holes for Subsequent Hole-Burnings : FUTURE TECHNOLOGY
• Integrated Radiation Detectors with a-Si Photodiodes on Ceramic Scintillators
• Medium-Range Order of Amorphous Silicon Germanium Alloys : Small-Angle X-Ray Scattering Study
• Influence of Deposition Conditions on Properties of a-SiGe:H Prepared by Microwave-Excited Plasma CVD : Condensed Matter
• Direct Observation of a-Si:H/a-Si_C_x:H Multilayers and Their Electrical Properties : Surfaces, Interfaces and Films
• Microwave-Excited Plasma CVD of a-Si:H Films Utilizing a Hydrogen Plasma Stream or by Direct Excitation of Silane
• Chemical Vapor Deposition of a-SiGe:H Films Utilizing a Microwave-Excited Plasma
• Chemical Vapor Deposition of a-Si:H Films Utilizing a Microwave Excited Ar Plasma Stream
• Preparation of High Purity a-Si:H Films and Their Light Soaking Effects
• Electron Irradiation Effects on Electrical Properties of a Bi_Pb_Sr_2Ca_2Cu_3O_ Superconductor
• Electron Irradiation Effects on a Bi_Pb_Sr_2Ca_2Cu_3O_ Superconductor
• Electrostrictive Materials for Ultrasonic Probes in the Pb(Mg_Nb_)O_3-PbTiO_3 System : F: FERROELECTRIC MATERIALS
• Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy : Teoretical Optimization Procedure (3)
• Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations : Theoretical Process Optimization Procedure(2)
• Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy : Theoretical Process Optimization Procedure(1)
• Infrared Spectra of Amorphous Silicon-Fluorine Alloys Prepared by Sputtering in Fluorosilane-Argon Gas Mixture
• Novel Amorphous Silicon Solar Cells Prepared by Photochemical Vapor Deposition : LATE NEWS
• Piezoelectric Ceramics with Zero Temperature Coefficients of Radial Mode Resonance Frequencies
• Photoassisted Electrochemical Deposition of Copper from a Bathocuproin Complex
• Short Cavity All-Solid-State Femtosecond Cr:LiSAF Laser
• Femtosecond Pulse Delivery through Long Multimode Fiber Using Adaptive Pulse Synthesis
• Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride
• Transform-Limited 30-fs Pulse Generation from a Diode-Pumped Kerr-Lens Mode-Locked Cr:LiSAF Laser
• Compact Diode-Pumped Cr^3+:LiSrAlF_6 Femtosecond Laser
• Ion Irradiation Effect on Ba_2YCu_3O_7 Superconductor
• Electron Irradiation Effects on a Ba_2YCu_3O_7 Superconductor : Electrical Properties of Condensed Matter
• Nondestructive Measurement of Minority Carrier Lifetimes in Si Wafers Using Frequency Dependence of ac Photovoltages
• Measurement of Minority Carrier Lifetimes using AC Photovoltages Excited by Two Photon Beams of Different Wavelengths
• A Non-Destructive Method for Measuring Lifetimes for Minority Carriers in Semiconductor Wafers Using Frequency-Dependent ac Photovoltages
• Characteristics of Silicon Solar Cells Fabricated by Non-Mass-Analyzed Ion Implantation : I-1: SILICON SOLAR CELLS (1) : Ion Implantation & Radiation damage
• A Photovoltaic Method for Evaluating Junction Characteristics Using Cut-Off Frequency
• Silicon Solar Cells Fabricated by a New Ion Implantation Concept : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
• Characterization of 3-Inch Solar Cells Fabricated from Granular Silicon Obtained in a Fluidized-Bed Reactor : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
• Impurity Gettering of Diffused Solar Cells Fabricated from Metallurgical-Grade Silicon : I-1: SILICON SOLAR CELLS (I)
• Efficient Solar Cells from Metallurgical-Grade Silicon : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
• Eptitaxial Solar Cells on Refined Metallurgical-Grade Silicon : B-1: AMORPHOUS SILICON AND SOLAR CELLS
• 100 MHz Band Ultrasonic Transducers Utilizing Epitaxially Grown ZnO Films : Ultrasonic Imaging and Microscopy
• Stopping Cross-Sections of Rare Gases in Amorphous Silicon for MeV Energy Helium Ions
• Molecular Beam Epitaxy of SnSe_2 : Chemistry and Electronic Properties of Interfaces
• RHEED Intensity Oscillation during Epitaxial Growth of Layered Materials
• Cis-Trans Photoisomerization of Perinaphthothioindigo for Use as a Photo-Imaging Sensor Using Fluorescence under He-Ne Laser Excitation
• Control of Optical Gap in a-Si_xC_: H Alloy Films Produced by Reactive Sputtering Method : II-2: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (II)
• very-Low-Temperature Silicon Epitaxy by Plasma-CVD Using SiH_4-PH_3-H_2 Reactants for Bipolar Devices : Condensed Matter
• Silicon Solar Cells Fabricated by Ion Implantation and Laser Annealing : I-3: SILICON SOLAR CELLS (III)
• GaAs_P_x Light Emitting Diodes Produced by Zn Ion Implantation. : I. Dose Dependence of Properties of Implanted Diodes
• The Magnetic Circular Dichroism and Diffraction of Light by Magnetic Domains in Gd_2Bi_1Fe_5O_
• Application of (Pb,Nd)(Ti,Mn,In)O_3 Piezoelcctric Ceramics to High Frequency SAW Filters : ELASTIC SURFACE WAVES
• Lead-Substituted Yttrium Iron Garnets and Their Anomalous Faraday Rotation
• Faraday Effect of Bi-Substituted Rare-Earth Iron Garnet
• Fabrication and Properties of Silicon Solar Cells Using Squarely Shaped Crystals : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
• On the Phase Transition-Like Structure Change of Disordered Lattice State of GaP (Selected Topics in Semiconductor Physics) -- (Impurity and Disordered States)
• GaAs_P_x Light Emitting Diodes Produced by Zn Ion Implantation. : II. Photoluminescence of p-Type Layers Formed by Ion Implantation and Diffusion
• XPS Determination of Amount of Incorporated Rare Gas in Amorphous Silicon Films Produced with Reactive Sputtering Method
• Observation of Si-2p Level Shift in Hydrogenated Amorphous Silicon by X-Ray Photoelectron Spectroscopy
• Observation of p-n Junctions with a Flying-Spot Scanner Using a Chopped Photon Beam
• Polycrystalline Indium Phosphide Solar Cells Fabricated on Molybdenum Substrates
• Microstructure of Polycrystalline Indium Phosphide Prepared by Chemical Vapor Deposition
• The Effect of Nonuniform Doping Density on Electron States in n-Type Si Inversion Layers
• Ultrasonic Array Transducer Using Interdigital Electrode : Ultrasonic Transduction
• Model for a Quartz-Crystal Tuning Fork Using Torsion Spring at the Joint of the Arm and the Base and Analysis of Its Frequency
• Non-Destructive Method of Observing Inhomogeneities in p-n Junctions with a Chopped Photon Beam
• Czochralski Growth of Square Silicon Single Crystals
• The Faraday Effect of Bismuth Substituted Rare-Earth Iron Garnet
• Optical Interference in a Thin Plate of Transparent Magnetic Material
• Characterization of Si Layers Deposited on (100) Si Substrates by Plasma CVD and Its Application to Si HBTs
• The Faraday Rotation of Y_2Bi_1Fe_Sc_yO_(0≤y≤0.75) at Low Temperatures

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