Characterization of Si Layers Deposited on (100) Si Substrates by Plasma CVD and Its Application to Si HBTs
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概要
- 論文の詳細を見る
Studies have been carried out on Si layers deposited on (100) Si substrates by plasma CVD, and on heterojunction devices fabricated with the layers. These Si layers vary from microcrystalline to epitaxial structures depending on substrate surface cleaning and deposition temperature conditions. The characteristics of Si HBTs using these layers as emitters depend greatly on the structures of the layers. Very thin interfacial oxides formed by RCA cleaning are effective in growing homogeneous microcrystalline emitters. Hetero-junction effects exemplified by high current gains at room and low temperatures demonstrated the usefulness of the microcrystalline emitters for HBTs and future BiCMOS technology.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-09-20
著者
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Tamura Masao
Central Research Laboratory
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Miyao Masanobu
Central Research Laboratory
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Matsubara Sunao
Central Research Laboraotry
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Kondo Masao
Central Research Laboratory Hitachi Ltd.
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Saitoh Tadashi
Central Research Laboraotry
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Kondo Masao
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185
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Tamura Masao
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185
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