High Hole Mobility in Modulation-Doped and Strain-Controlled p-Si_<0.5>Ge_<0.5>/Ge/Si_<1-Xs>Ge_<Xs> Heterostructures Fabricated Using Molecular Beam Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
New heterostructures of modulation-doped p-Si_<0.5>Ge_<0.5>/Ge/Si_<1-Xs>Ge_<Xs> are fabricated using molecular beam epitaxy. The strain in the Ge channel layer can be precisely controlled by changing the composition of the Si_<1-Xs>Ge_<Xs> buffer layer. As a result, a large energy discontinuity (0.22 eV) in the valence band is realized. This leads to the realization of a high hole mobility (4500 cm^2/V・s) at 77 K.
- 社団法人応用物理学会の論文
- 1990-07-20
著者
-
NAKAGAWA Kiyokazu
Central Research Laboratory, Hitachi Ltd.
-
Etoh H
Central Research Laboratoty Hitachi Ltd.
-
Miyao M
Central Research Laborotory Hitachi Ltd.:(present Address)information Science And Electrical Enginee
-
Miyao Masanobu
Central Research Laboratory
-
MURAKAMI Eiichi
Central Research Laboratory, Hitachi, Ltd.
-
Murakami E
Canon Inc. Tochigi Jpn
-
Murakami Eiichi
Central Research Laboratory Hitachi Ltd.
-
Etoh Hiroyuki
Central Research Laboratoty, Hitachi Ltd.
-
Nakagawa Kiyokazu
Central Research Laboratory Hitachi Ltd.
-
Murakami E
Nanotechnology Research Center Canon Inc.
関連論文
- Controlled Atomic Layer Doping and ALD MOSFET Fabrication in Si
- Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy
- Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON
- Effect of Atomic and Molecular Hydrogen Irradiation on Ge Surface Segregation during Si Molecular Beam Epitaxy
- Microstructure of Visible Light Emitting Porous Silicon
- Fine Structure of Porous Si with Visible Photoluminescence
- Molecular Beam Epitaxy of Silicon-Based Heterostructure and Its Application to Novel Devices
- Characterization of Laser-Induced Epitaxial Si Crystal by Evaluating MOSFET's Fabricated in Grown Layers : A-6: SILICON CRYSTALS
- Nature and Annealing Behavior of Disorders in Ion Implanted Silicon
- Low Temperature Annealing Characteristics of Phosphorus-Implanted Silicon : A-3: DEVICE TECHNOLOGY (III)
- MBE-Related Surface Fegregation of Dopant Atoms in Silicon : Condensed Matter
- Short Channel MOS FET's Fabricated by Self-Aligned Ion Implantation and Laser Annealing : A-3: LASER ANNEALING/SOS DEVICES
- Optical Investigations of Solid-Phase Crystallization of Si_Ge_x
- Optical Investigations of Solid-Phase Crystallization (SPC) Properties of Si_Ge_X
- Atomic-Layer Doping in Si_Ge_x/Si/Si_Ge_x Heterostructures by Two-Step Solid-Phase Epitaxy
- Atomic-Layer Doping in Si_Ge_x/Si/Si_Ge_x Heterostructures by Two-Step Solid-Phase Epitaxy
- Surface Segregation Behaviors of B, Ga, and Sb during Si Molecular Beam Epitaxy : Calculation Using a First-Principles Method
- Ultrahigh Electron Mobilities in Si_Ge_x/Si/Si_Ge_x Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy
- Surface Segregation Behaviors of B, Ga, and Sb during Si-MBE : Calculation Using a First-Principle Method
- Quantitative Correlation between the Surface Segregation of Ge and the Light Emission of Si/SiGe/Si Heterostructures
- Ultrahigh Electron Mobilities in Si_Ge_x/Si/Si_Ge_x Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy
- Local-Symmetry Induced Light Emission from Si/Si_Ge_x/Si Quantum Wells
- Dielectric Degradation Mechanism of SiO_2 Examined by First-Principles Calculations : Electronic Conduction Associated with Electron Trap Levels in SiO_2 and Stability of Oxygen Vacancies Under an Electric Field
- Dielectric Degradation Mechanism of SiO_2 Examined through First-Principles Calculations : Electric Conduction Associated with Electron Traps and Its Stability under an Electric Field
- Nondestructive Observation of Si_Ge_/Ge/ Si_Ge_x Heterostructure Using Soft X-Ray Emission Spectroscopy
- Influence of Ion Energy on Carrier Activation and Source/Drain Parasitic Resistance in Low-Energy Ion Implantation for 0.15-μm MOSFETs
- Peroxy Linkage Defects in SiO_2 Examined through First-Principles Calculations : Defect Formation, Boron Binding, and Charged States of the B Adduct
- Dependence of Hopping-Conduction Energy of Holes on Distance between Trap Sites in SiO_2 : a Molecular Orbital Calculation
- Incorporation of N into Si/SiO_2 Interfaces : Molecular Orbital Calculations for Evaluating Interface Strain and Heat of Reaction
- Hopping-Conduction Energy of Holes in SiO_2 Determined Accurately by Molecular Orbital Calculation
- Molecular Orbital Theory Examination into the Improvement of Gate Oxide Integrity with the Incorporation of Nitrogen and Fluorine
- Influence of Strain on Electrical Properties of the Ge Channel in the Modulation-Doped p-Si_Ge_/Ge/Si_Ge_x Heterostructure
- High Hole Mobility in Modulation-Doped and Strain-Controlled p-Si_Ge_/Ge/Si_Ge_ Heterostructures Fabricated Using Molecular Beam Epitaxy
- Nanostructure Fabrication Based on Sporntaneous Formation Mechanisms
- Formation of High-Density Etch Pits on a Si Surface after Low-Temperature Heating in an Ultrahigh Vacuum
- Thermal Behavior of B, P and As Atoms in Supersaturated Si Produced by Ion Implantation and Pulsed-Laser Annealing
- Characteristics of Boron Diffusion from BSG Film and the Formation of Ultra-Shallow, Low-Resistance Junctions
- Ultra-Shallow and Abrupt Boron Profiles in Si by δ-Doping Technique
- Silicon Solar Cells Fabricated by Ion Implantation and Laser Annealing : I-3: SILICON SOLAR CELLS (III)
- Optical Reflectivity Studies of Damage in Ion Implanted Silicon
- Characterization of Si Layers Deposited on (100) Si Substrates by Plasma CVD and Its Application to Si HBTs
- Dielectric Degradation Mechanism of SiO2 Examined by First-Principles Calculations: Electronic Conduction Associated with Electron Trap Levels in SiO2 and Stability of Oxygen Vacancies Under an Electric Field