MURAKAMI Eiichi | Central Research Laboratory, Hitachi, Ltd.
スポンサーリンク
概要
関連著者
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MURAKAMI Eiichi
Central Research Laboratory, Hitachi, Ltd.
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Murakami Eiichi
Central Research Laboratory Hitachi Ltd.
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NAKAGAWA Kiyokazu
Central Research Laboratory, Hitachi Ltd.
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Nakagawa Kiyokazu
Central Research Laboratory Hitachi Ltd.
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Nishida Akio
Central Research Laboratory Hitachi Ltd.
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Etoh H
Central Research Laboratoty Hitachi Ltd.
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Miyao M
Central Research Laborotory Hitachi Ltd.:(present Address)information Science And Electrical Enginee
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Miyao Masanobu
Central Research Laboratory
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Murakami E
Canon Inc. Tochigi Jpn
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Etoh Hiroyuki
Central Research Laboratoty, Hitachi Ltd.
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Murakami E
Nanotechnology Research Center Canon Inc.
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中村 裕之
Graduate School Of Material Science University Of Hyogo
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Hirai M
Osaka Univ. Osaka Jpn
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Hirai M
Research Laboratory For Surface Science Faculty Of Science Okayama University
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Nakamura H
Institute For Protein Research Osaka University
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Nishida Akio
Central Research Laboratoty Hitachi Ltd.
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Kusaka M
Research Laboratory For Surface Science Faculty Of Science Okayama University
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Hirai Masaaki
Research Laboratory For Surface Science Faculty Of Science Okayama University
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IWAMI Motohiro
Research Laboratory for Surface Science, Faculty of Science, Okayama University
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KUSAKA Masahiko
Research Laboratory for Surface Science, Faculty of Science, Okayama University
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NAKAMURA Hatsuo
Osaka Electro-Communication University
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Kawai M
Surface Chemistry Laboratory
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Iwami Motohiro
Reseach Laboratory For Surface Science Faculty Of Science Okayama University
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Iwami M
Department Of Physics Faculty Of Science Hiroshima University
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Kusaka Masahiko
Research Laboratory For Surface Science Faculty Of Science Okayama University
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Iwami M
Research Laboratory For Surface Science Faculty Of Science Okayama University
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Kimura Shin'ichiro
Central Research Laboratory Hitachi Ltd.
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NAKAGAWA Kiyokazu
Central Research Laboratory, Hitachi, Ltd.
著作論文
- Nondestructive Observation of Si_Ge_/Ge/ Si_Ge_x Heterostructure Using Soft X-Ray Emission Spectroscopy
- Influence of Ion Energy on Carrier Activation and Source/Drain Parasitic Resistance in Low-Energy Ion Implantation for 0.15-μm MOSFETs
- Influence of Strain on Electrical Properties of the Ge Channel in the Modulation-Doped p-Si_Ge_/Ge/Si_Ge_x Heterostructure
- High Hole Mobility in Modulation-Doped and Strain-Controlled p-Si_Ge_/Ge/Si_Ge_ Heterostructures Fabricated Using Molecular Beam Epitaxy