Influence of Strain on Electrical Properties of the Ge Channel in the Modulation-Doped p-Si_<0.5>Ge_<0.5>/Ge/Si_<1-x>Ge_x Heterostructure

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The influence of strain on the electrical properties of the Ge channel in a modulation-doped p-Si_<0.5>Ge_<0.5>/Ge/Si_<1-x>Ge_x heterostructure is studied in relation to the Si mole fractiorn (1-x) and the thickness of the Si_<1-x>Ge_x buffer layer. In the range of 1-x≤0.25, the hole concentration and mobility increase with strain in the Ge channel. However, in the range of 1-x>0.25, they decrease with strain due to the large number of threading dislocations. It is also found that hole concentration and mobility increase with buffer layer thickness. As a result, a very high mobility of 7600 cm^2・V^<-1>・s^<-1> at 77 K is obtained at a Si mole fraction of 0.25 and buffer layer thickness of 1μm.
社団法人応用物理学会の論文
1991-02-01