Miyao M | Central Research Laborotory Hitachi Ltd.:(present Address)information Science And Electrical Enginee

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著作論文

Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON
Molecular Beam Epitaxy of Silicon-Based Heterostructure and Its Application to Novel Devices
Optical Investigations of Solid-Phase Crystallization of Si_Ge_x
Optical Investigations of Solid-Phase Crystallization (SPC) Properties of Si_Ge_X
Atomic-Layer Doping in Si_Ge_x/Si/Si_Ge_x Heterostructures by Two-Step Solid-Phase Epitaxy
Atomic-Layer Doping in Si_Ge_x/Si/Si_Ge_x Heterostructures by Two-Step Solid-Phase Epitaxy
Surface Segregation Behaviors of B, Ga, and Sb during Si Molecular Beam Epitaxy : Calculation Using a First-Principles Method
Ultrahigh Electron Mobilities in Si_Ge_x/Si/Si_Ge_x Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy
Surface Segregation Behaviors of B, Ga, and Sb during Si-MBE : Calculation Using a First-Principle Method
Quantitative Correlation between the Surface Segregation of Ge and the Light Emission of Si/SiGe/Si Heterostructures
Ultrahigh Electron Mobilities in Si_Ge_x/Si/Si_Ge_x Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy
Local-Symmetry Induced Light Emission from Si/Si_Ge_x/Si Quantum Wells
Dielectric Degradation Mechanism of SiO_2 Examined by First-Principles Calculations : Electronic Conduction Associated with Electron Trap Levels in SiO_2 and Stability of Oxygen Vacancies Under an Electric Field
Dielectric Degradation Mechanism of SiO_2 Examined through First-Principles Calculations : Electric Conduction Associated with Electron Traps and Its Stability under an Electric Field
Peroxy Linkage Defects in SiO_2 Examined through First-Principles Calculations : Defect Formation, Boron Binding, and Charged States of the B Adduct
Dependence of Hopping-Conduction Energy of Holes on Distance between Trap Sites in SiO_2 : a Molecular Orbital Calculation
Incorporation of N into Si/SiO_2 Interfaces : Molecular Orbital Calculations for Evaluating Interface Strain and Heat of Reaction
Hopping-Conduction Energy of Holes in SiO_2 Determined Accurately by Molecular Orbital Calculation
Molecular Orbital Theory Examination into the Improvement of Gate Oxide Integrity with the Incorporation of Nitrogen and Fluorine
Influence of Strain on Electrical Properties of the Ge Channel in the Modulation-Doped p-Si_Ge_/Ge/Si_Ge_x Heterostructure
High Hole Mobility in Modulation-Doped and Strain-Controlled p-Si_Ge_/Ge/Si_Ge_ Heterostructures Fabricated Using Molecular Beam Epitaxy
Nanostructure Fabrication Based on Sporntaneous Formation Mechanisms

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