Kikukawa K | Semiconductor And Integrated Circuits Division Hitachi Ltd.
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概要
関連著者
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Kubota K
Department Of Biological And Chemical Engineering Faculty Of Technology Gunma University
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Kikukawa K
Semiconductor And Integrated Circuits Division Hitachi Ltd.
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Shindo H
Tokai Univ. Hiratsuka Jpn
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Shindo H
Samsung Yokohama Res. Inst. Yokohama Jpn
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HORIIKE Yasuhiro
Department of Electrical Engineering, Toyo University
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Shindo Haruo
Faculty of Agriculture, Yamaguchi University
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Kubota Kazuhiro
Department of Electrical Engineering, Hiroshima University
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Shindo H
Department Of Electronics Faculty Of Engineering Hiroshima University
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Horiike Yasuhiro
National Institute For Materials Science
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Horiike Yasuhiro
Department Of Electrical & Electronics Engineering Tokyo University
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Horiike Yasuhiro
Faculty Of Engineering Hiroshima University
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Horiike Yasuhiro
Department Of Electrical Engineering Toyo University
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Shindo Haruo
Faculty Of Agriculture Nagoya University : (present Address) Faculty Of Agriculture Yamaguchi Univer
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堀池 靖浩
広島大工
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Shindo Haruo
Faculty Of Agriculture Nagoya University
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Kubota Kazuhiro
Department of Chemistry, Faculty of Engineering, Gunma University
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堀池 靖浩
物質･材料研究機構
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Shindo H
Yamaguchi Univ. Yamaguchi Jpn
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Kitagawa Isao
Semiconductor And Integrated Circuits Division Hitachi Ltd.
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KUBOTA Katsuhiko
Semiconductor & Integrated Circuits, Hitachi Ltd.
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Horiike Yasuhiro
Faculty Of Engineering Toyo University
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USHIO Jiro
Advanced Research Laboratory, Hitachi Ltd.
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MARUIZUMI Takuya
Advanced Research Laboratory, Hitachi Ltd.
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Fukasawa Takayuki
Faculty Of Engineering Fukuyama University:(present Address)2nd Development Engineering Dpt. Tokyo E
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Ushio Jiro
Advanced Research Laboratory Hitachi Ltd.
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Miyao M
Central Research Laborotory Hitachi Ltd.:(present Address)information Science And Electrical Enginee
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Miyao Masanobu
Central Research Laboratory
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Maruizumi Takuya
Advanced Research Laboratory Hitachi Ltd.
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Fukasawa Teruichiro
Department Of Physics Science University Of Tokyo:(permanent Address)toshiba Manufacturing Engineeri
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新宮原 正三
Hiroshima University Graduate School Of Adsm
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Matsumoto Hiroyuki
Department of Electrical Engineering, Toyo University
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Shingubara Shoso
Department of Electrical Engineering, Hiroshima University
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FUKASAWA Takayuki
2nd Development Engineering Dept., Tokyo Electron Yamanshi Limited
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JIWARI Nobuhiro
Department of Electrical Engineering, Hiroshima University
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FUKASAWA Takayuki
Department of Electrical Engineering, Hiroshima University
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NAKAMURA Akihiro
Department of Electrical Engineering, Hiroshima University
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Nakamura A
Faculty Of Pharmacy And Parmaceutical Sciences Fukuyama University
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Shindo Haruo
Faculty Of Engineering Fukuyama University
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Narai Akira
Faculty Of Engineering Hiroshima University
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Shingubara Shoso
Department Of Applied Physics Tokyo Institute Of Technology:vlsi Research Center Toshiba Corporation
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KITAGAWA Isao
Advanced Research Laboratory, Hitachi, Ltd.
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Jiwari Nobuhiro
Department Of Electrical Engineering Hiroshima University
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Nakamura Akihiro
Department Of Applied Chemistry And Biotechnology Faculty Of Engineering Yamanashi University
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Matsumoto Hiroyuki
Department Of Biochemistry And Molecular Biology University Of Oklahoma Health Sciences Center
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Matsumoto Hiroyuki
Department Of Biochemistry And Molecular Biology The University Of Oklahoma Health Sciences Center
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Shindo Haruo
Faculty of Engineering, Fukuyama University
著作論文
- Measurement of Fluorocarbon Radicals Generated from C_4F_8/H_2 Inductively Coupled Plasma : Study on SiO_2 Selective Etching Kinetics
- Microloading Effect in Highty Selective Si0_2 Contact Hole Etching Employing Inductively Coupled Plasma
- Effect of Magnetic Field to Etching Characteristics of Inductively Coupled Plasma ( Plasma Processing)
- Dielectric Degradation Mechanism of SiO_2 Examined by First-Principles Calculations : Electronic Conduction Associated with Electron Trap Levels in SiO_2 and Stability of Oxygen Vacancies Under an Electric Field
- Dielectric Degradation Mechanism of SiO_2 Examined through First-Principles Calculations : Electric Conduction Associated with Electron Traps and Its Stability under an Electric Field