KUBOTA Katsuhiko | Semiconductor & Integrated Circuits, Hitachi Ltd.
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概要
関連著者
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KUBOTA Katsuhiko
Semiconductor & Integrated Circuits, Hitachi Ltd.
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Ushio Jiro
Advanced Research Laboratory Hitachi Ltd.
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Miyao Masanobu
Central Research Laboratory
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Maruizumi Takuya
Advanced Research Laboratory Hitachi Ltd.
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Kitagawa Isao
Semiconductor And Integrated Circuits Division Hitachi Ltd.
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Kubota K
Department Of Biological And Chemical Engineering Faculty Of Technology Gunma University
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USHIO Jiro
Advanced Research Laboratory, Hitachi Ltd.
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MARUIZUMI Takuya
Advanced Research Laboratory, Hitachi Ltd.
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Miyao M
Central Research Laborotory Hitachi Ltd.:(present Address)information Science And Electrical Enginee
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KITAGAWA Isao
Advanced Research Laboratory, Hitachi, Ltd.
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Kikukawa K
Semiconductor And Integrated Circuits Division Hitachi Ltd.
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Kamohara Shiro
Semiconductor & Integrated Circuits Hitachi Ltd.
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OKUYAMA Yutaka
Central Research Laboratory, Hitachi Ltd.
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KOBAYASHI Takashi
Central Research Laboratory, Hitachi Ltd.
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KUME Hitoshi
Central Research Laboratory, Hitachi Ltd.
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MANABE Yukiko
Semiconductor & Integrated Circuits, Hitachi Ltd.
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KATO Masataka
Semiconductor & Integrated Circuits, Hitachi Ltd.
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OKUYAMA Kousuke
Semiconductor & Integrated Circuits, Hitachi Ltd.
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Kobayashi Takashi
Central Research Laboratory Hitachi Ltd.
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Kume Hitoshi
Central Research Laboratory Hitachi Ltd.
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Kume Hitoshi
Central Research Laboratory
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Manabe Yukiko
Semiconductor & Integrated Circuits Hitachi Ltd.
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Okuyama Yutaka
Central Research Laboratory Hitachi Ltd.
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Okuyama Kousuke
Semiconductor & Integrated Circuits Hitachi Ltd.
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Kubota Katsuhiko
Semiconductor & Integrated Circuits Hitachi Ltd.
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Kato Masataka
Semiconductor & Integrated Circuits Hitachi Ltd.
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Maruizumi Takuya
Advanced Research Laboratory, Hitachi Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Kubota Katsuhiko
Semiconductor and Integrated Circuits division, Hitachi Ltd., 16-3 Shinmachi 6-chome, Ome, Tokyo 198-8512, Japan
著作論文
- Anomalous Leakage Current Model for Retention Failure in Flash Memories
- Dielectric Degradation Mechanism of SiO_2 Examined by First-Principles Calculations : Electronic Conduction Associated with Electron Trap Levels in SiO_2 and Stability of Oxygen Vacancies Under an Electric Field
- Dielectric Degradation Mechanism of SiO_2 Examined through First-Principles Calculations : Electric Conduction Associated with Electron Traps and Its Stability under an Electric Field
- Dielectric Degradation Mechanism of SiO2 Examined by First-Principles Calculations: Electronic Conduction Associated with Electron Trap Levels in SiO2 and Stability of Oxygen Vacancies Under an Electric Field