Dielectric Degradation Mechanism of SiO2 Examined by First-Principles Calculations: Electronic Conduction Associated with Electron Trap Levels in SiO2 and Stability of Oxygen Vacancies Under an Electric Field

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概要

• 論文の詳細を見る

• We studied the degradation mechanism of silicon dioxide under an electric field using first-principles calculations. First, we determined that the distance between oxygen vacancies primarily plays the role of electronic interaction of electron trap levels and that a critical distance of 12 Å, exists. At this critical distance, the leakage conduction mechanism is varied from insulator (hopping) to metallic. Second, we examined the stability of oxygen vacancies under an applied field. We determined that the oxygen vacancy pair within 7 Å is more stable than the one which is further apart when it becomes positively charged under a high field.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2000-04-30

著者

• KUBOTA Katsuhiko

  Semiconductor & Integrated Circuits, Hitachi Ltd.

• Ushio Jiro

  Advanced Research Laboratory Hitachi Ltd.

• Miyao Masanobu

  Central Research Laboratory

• KITAGAWA Isao

  Advanced Research Laboratory, Hitachi, Ltd.

• Maruizumi Takuya

  Advanced Research Laboratory Hitachi Ltd.

• Maruizumi Takuya

  Advanced Research Laboratory, Hitachi Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Kubota Katsuhiko

  Semiconductor and Integrated Circuits division, Hitachi Ltd., 16-3 Shinmachi 6-chome, Ome, Tokyo 198-8512, Japan

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