Interface Structures Generated by Negative-Bias Temperature Instability in Si/SiO_2 and Si/SiO_xN_y Interfaces

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概要

• 論文の詳細を見る
• 2001-09-25

著者

• USHIO Jiro

  Advanced Research Laboratory, Hitachi Ltd.

• MARUIZUMI Takuya

  Advanced Research Laboratory, Hitachi Ltd.

• Ushio Jiro

  Advanced Research Laboratory Hitachi Ltd.

• Kushida Abdelghafar

  Central Research Laboratory Hitachi Ltd.

• Maruizumi Takuya

  Advanced Research Laboratory Hitachi Ltd.

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• Dielectric Degradation Mechanism of SiO_2 Examined by First-Principles Calculations : Electronic Conduction Associated with Electron Trap Levels in SiO_2 and Stability of Oxygen Vacancies Under an Electric Field
• Dielectric Degradation Mechanism of SiO_2 Examined through First-Principles Calculations : Electric Conduction Associated with Electron Traps and Its Stability under an Electric Field
• The Atomistic Origin of High Dielectric Constants of Ta_2O_5 Thin Film Deposited on Ru Electrodes
• Interface Structures Generated by Negative-Bias Temperature Instability in Si/SiO_2 and Si/SiO_xN_y Interfaces
• Defect Termination by Nitrogen Bonding due to NO Nitridation in MOS Structures
• Peroxy Linkage Defects in SiO_2 Examined through First-Principles Calculations : Defect Formation, Boron Binding, and Charged States of the B Adduct
• Dependence of Hopping-Conduction Energy of Holes on Distance between Trap Sites in SiO_2 : a Molecular Orbital Calculation
• Incorporation of N into Si/SiO_2 Interfaces : Molecular Orbital Calculations for Evaluating Interface Strain and Heat of Reaction
• Hopping-Conduction Energy of Holes in SiO_2 Determined Accurately by Molecular Orbital Calculation
• Molecular Orbital Theory Examination into the Improvement of Gate Oxide Integrity with the Incorporation of Nitrogen and Fluorine
• High-Accuracy Analysis of Interconnect Capacitance for Floating Metal Fills
• Dissociative Adsorption Mechanism of Product Gas in W-CVD Revealed by Molecular Orbital Calculation and Its Determinant Role in Filling Features
• Non-Equilibrium Structures of Si/SiO_2 and Si/SiO_xN_y Interfaces
• Dielectric Degradation Mechanism of SiO2 Examined by First-Principles Calculations: Electronic Conduction Associated with Electron Trap Levels in SiO2 and Stability of Oxygen Vacancies Under an Electric Field

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