Non-Equilibrium Structures of Si/SiO_2 and Si/SiO_xN_y Interfaces

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概要

• 論文の詳細を見る
• 2000-08-28

著者

• Ushio Jiro

  Advanced Research Laboratory Hitachi Ltd.

• Maruizumi Takuya

  Advanced Research Laboratory Hitachi Ltd.

• SCHULTE Jurgen

  Department of Applied Physics, University of Technology

• Schulte Jurgen

  Department Of Applied Physics University Of Technology

• MARUIZUMI Takuya

  Advanced Research Laboratory, Hitachi, Ltd.

関連論文

• Three-Dimensional Capacitance Analysis in an SRAM Cell
• Dielectric Degradation Mechanism of SiO_2 Examined by First-Principles Calculations : Electronic Conduction Associated with Electron Trap Levels in SiO_2 and Stability of Oxygen Vacancies Under an Electric Field
• Dielectric Degradation Mechanism of SiO_2 Examined through First-Principles Calculations : Electric Conduction Associated with Electron Traps and Its Stability under an Electric Field
• The Atomistic Origin of High Dielectric Constants of Ta_2O_5 Thin Film Deposited on Ru Electrodes
• Interface Structures Generated by Negative-Bias Temperature Instability in Si/SiO_2 and Si/SiO_xN_y Interfaces
• High-Accuracy Analysis of Interconnect Capacitance for Floating Metal Fills
• Non-Equilibrium Structures of Si/SiO_2 and Si/SiO_xN_y Interfaces
• Dielectric Degradation Mechanism of SiO2 Examined by First-Principles Calculations: Electronic Conduction Associated with Electron Trap Levels in SiO2 and Stability of Oxygen Vacancies Under an Electric Field

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