Maruizumi Takuya | Advanced Research Laboratory Hitachi Ltd.

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著作論文

Three-Dimensional Capacitance Analysis in an SRAM Cell
Dielectric Degradation Mechanism of SiO_2 Examined by First-Principles Calculations : Electronic Conduction Associated with Electron Trap Levels in SiO_2 and Stability of Oxygen Vacancies Under an Electric Field
Dielectric Degradation Mechanism of SiO_2 Examined through First-Principles Calculations : Electric Conduction Associated with Electron Traps and Its Stability under an Electric Field
The Atomistic Origin of High Dielectric Constants of Ta_2O_5 Thin Film Deposited on Ru Electrodes
Interface Structures Generated by Negative-Bias Temperature Instability in Si/SiO_2 and Si/SiO_xN_y Interfaces
High-Accuracy Analysis of Interconnect Capacitance for Floating Metal Fills
Non-Equilibrium Structures of Si/SiO_2 and Si/SiO_xN_y Interfaces
Dielectric Degradation Mechanism of SiO2 Examined by First-Principles Calculations: Electronic Conduction Associated with Electron Trap Levels in SiO2 and Stability of Oxygen Vacancies Under an Electric Field

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