Low Temperature Annealing Characteristics of Phosphorus-Implanted Silicon : A-3: DEVICE TECHNOLOGY (III)
スポンサーリンク
概要
著者
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TAMURA Masao
Central Research Laboratory, Hitachi, Ltd.
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NATSUAKI Nobuyoshi
Central Research Laboratory, Hitachi Ltd.
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Tamura Masao
Central Research Laboratory
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Miyao Masanobu
Central Research Laboratory
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TOKUYAMA Takashi
Central Research Laboratory
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YOSHIHIRO Naotsugu
Central Research Laboratory, Hitachi Ltd.
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Natsuaki Nobuyoshi
Central Research Laboratory Hitachi Ltd.
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Yoshihiro Naotsugu
Central Research Laboratory Hitachi Ltd.
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Natsuaki Nobuyoshi
Central Laboratory Hitachi Ltd.
関連論文
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- Characteristics of Bipolar Transistors with Various Depths of n^+ Buried Layers Formed by High-Energy Ion Implantation
- Molecular Beam Epitaxy of Silicon-Based Heterostructure and Its Application to Novel Devices
- Characterization of Laser-Induced Epitaxial Si Crystal by Evaluating MOSFET's Fabricated in Grown Layers : A-6: SILICON CRYSTALS
- Nature and Annealing Behavior of Disorders in Ion Implanted Silicon
- Low Temperature Annealing Characteristics of Phosphorus-Implanted Silicon : A-3: DEVICE TECHNOLOGY (III)
- MBE-Related Surface Fegregation of Dopant Atoms in Silicon : Condensed Matter
- Short Channel MOS FET's Fabricated by Self-Aligned Ion Implantation and Laser Annealing : A-3: LASER ANNEALING/SOS DEVICES
- Effects of Dislocation on Planar Channelling of Energetic H^+ and He^+ Ions
- Planar Dechannelling of Energetic Ions at Dislocations. : III. Dechannelling at Edge Dislocations in Si
- Optical Investigations of Solid-Phase Crystallization (SPC) Properties of Si_Ge_X
- Atomic-Layer Doping in Si_Ge_x/Si/Si_Ge_x Heterostructures by Two-Step Solid-Phase Epitaxy
- Atomic-Layer Doping in Si_Ge_x/Si/Si_Ge_x Heterostructures by Two-Step Solid-Phase Epitaxy
- Surface Segregation Behaviors of B, Ga, and Sb during Si Molecular Beam Epitaxy : Calculation Using a First-Principles Method
- Ultrahigh Electron Mobilities in Si_Ge_x/Si/Si_Ge_x Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy
- Surface Segregation Behaviors of B, Ga, and Sb during Si-MBE : Calculation Using a First-Principle Method
- Quantitative Correlation between the Surface Segregation of Ge and the Light Emission of Si/SiGe/Si Heterostructures
- Ultrahigh Electron Mobilities in Si_Ge_x/Si/Si_Ge_x Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy
- Local-Symmetry Induced Light Emission from Si/Si_Ge_x/Si Quantum Wells
- Generation of Dislocations Induced by Chemical Vapor Deposited Si_3N_4 Films on Silicon
- Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2
- Deposition of Silicon Nitride Films by Microwave Glow Discharge
- Dielectric Degradation Mechanism of SiO_2 Examined by First-Principles Calculations : Electronic Conduction Associated with Electron Trap Levels in SiO_2 and Stability of Oxygen Vacancies Under an Electric Field
- Dielectric Degradation Mechanism of SiO_2 Examined through First-Principles Calculations : Electric Conduction Associated with Electron Traps and Its Stability under an Electric Field
- High Dose Rate Effect of Focused-Ion-Beam Boron Implantation into Silicon
- Characteristics of Silicon Solar Cells Fabricated by Non-Mass-Analyzed Ion Implantation : I-1: SILICON SOLAR CELLS (1) : Ion Implantation & Radiation damage
- Silicon Solar Cells Fabricated by a New Ion Implantation Concept : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
- Characterization of 3-Inch Solar Cells Fabricated from Granular Silicon Obtained in a Fluidized-Bed Reactor : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
- Impurity Gettering of Diffused Solar Cells Fabricated from Metallurgical-Grade Silicon : I-1: SILICON SOLAR CELLS (I)
- Efficient Solar Cells from Metallurgical-Grade Silicon : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
- Eptitaxial Solar Cells on Refined Metallurgical-Grade Silicon : B-1: AMORPHOUS SILICON AND SOLAR CELLS
- Submicron Channel MOSFET Using Focused Boron Ion Beam Implantation into Silicon
- Peroxy Linkage Defects in SiO_2 Examined through First-Principles Calculations : Defect Formation, Boron Binding, and Charged States of the B Adduct
- Dependence of Hopping-Conduction Energy of Holes on Distance between Trap Sites in SiO_2 : a Molecular Orbital Calculation
- Incorporation of N into Si/SiO_2 Interfaces : Molecular Orbital Calculations for Evaluating Interface Strain and Heat of Reaction
- Hopping-Conduction Energy of Holes in SiO_2 Determined Accurately by Molecular Orbital Calculation
- Molecular Orbital Theory Examination into the Improvement of Gate Oxide Integrity with the Incorporation of Nitrogen and Fluorine
- Influence of Strain on Electrical Properties of the Ge Channel in the Modulation-Doped p-Si_Ge_/Ge/Si_Ge_x Heterostructure
- High Hole Mobility in Modulation-Doped and Strain-Controlled p-Si_Ge_/Ge/Si_Ge_ Heterostructures Fabricated Using Molecular Beam Epitaxy
- Nanostructure Fabrication Based on Sporntaneous Formation Mechanisms
- Single Pulse Laser Annealing of a Double-Implanted Layer
- Germanium and Silicon Film Growth by Low-Energy Ion Beam Deposition
- Improvement of Crystalline Quality of SOS with Laser Irradiation Techniques
- Electrical Properties of Focused-Ion-Beam Boron-Implanted Silicon
- very-Low-Temperature Silicon Epitaxy by Plasma-CVD Using SiH_4-PH_3-H_2 Reactants for Bipolar Devices : Condensed Matter
- Thermal Behavior of B, P and As Atoms in Supersaturated Si Produced by Ion Implantation and Pulsed-Laser Annealing
- Secondary Defects in 2 MeV Phosphorus Implanted Silicon
- Silicon Solar Cells Fabricated by Ion Implantation and Laser Annealing : I-3: SILICON SOLAR CELLS (III)
- Optical Reflectivity Studies of Damage in Ion Implanted Silicon
- Lattice Defects in High-Dose As Implantation into Localized Si area : Condensed Matter
- Distribution and Character of Misfit Dislocations in Homoepitaxial Silicon Crystals
- Low Energy and High Dose Phosphorus Ion Implantation into Silicon through SiO_2 Film
- Si Bridging Epitaxy from Si Windows onto SiO_2 by Q-Switched Ruby Laser Pulse Annealing
- Contactless Measurement of Wafer Lifetime by Free Carrier Infrared Absorption : C-6: CHARACTERIZATION
- Fabrication and Properties of Silicon Solar Cells Using Squarely Shaped Crystals : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
- Chemical and Physical Sputtering in F^+ Ion Beam Etching of Si
- Thermal Expansion Coefficient of a Pyrolitically Deposited Silicon Nitride Film
- Microplasmas in Alloyed Germanium P-N Junctions
- Epitaxial Transformation of Ion-Implanted Polycrystalline Si Films on (100) Si Substrates by Rapid Thermal Annealing
- Dislocation-Free Formation of Artificial Cavities in Si Single Crystal
- Improvement of SiO2/Si Interface Properties Utilising Fluorine Ion Implantation and Drive-in Diffusion
- Characterization of Si Layers Deposited on (100) Si Substrates by Plasma CVD and Its Application to Si HBTs
- Dielectric Degradation Mechanism of SiO2 Examined by First-Principles Calculations: Electronic Conduction Associated with Electron Trap Levels in SiO2 and Stability of Oxygen Vacancies Under an Electric Field