USHIO Jiro | Central Research Laboratory, Hitachi, Ltd.

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概要

• 同名の論文著者
• Central Research Laboratory, Hitachi, Ltd.の論文著者

関連著者

• USHIO Jiro

  Advanced Research Laboratory, Hitachi Ltd.

• MARUIZUMI Takuya

  Advanced Research Laboratory, Hitachi Ltd.

• USHIO Jiro

  Central Research Laboratory, Hitachi, Ltd.

• MARUIZUMI Takuya

  Central Research Laboratory, Hitachi, Ltd.

• Miyao M

  Central Research Laborotory Hitachi Ltd.:(present Address)information Science And Electrical Enginee

• Miyao Masanobu

  Central Research Laboratory

• Takemura Yoshiaki

  Advanced Research Laboratory Hitachi Ltd.

• Takemura Yoshiaki

  Central Research Laboratory Hitachi Ltd.

• NAKAGAWA Kiyokazu

  Center for Crystal Science and Technology, University of Yamanashi

• NAKAGAWA Kiyokazu

  Central Research Laboratory, Hitachi Ltd.

• Nakagawa Kenichi

  Liquid Ctystal Laboratories Sharp Corporation

• Nakagawa K

  Department Of Advanced Material Science Faculty Of Engineering Kagawa University

• Nakagawa K

  Center For Crystal Science And Technology University Of Yamanashi

• TAKEMURA Yoshiaki

  Central Research Laboratory, Hitachi, Ltd.

• Nakagawa Kiyokazu

  Central Research Laboratory Hitachi Ltd.

• Nakagawa Keisuke

  Department Of Applied Physics Faculty Of Science Science University Of Tokyo

• Kobayashi Nobuyoshi

  Semiconductor Development Center Semiconductor & Integrated Circuits Division Hitachi Ltd.

• Kobayashi Nobuyoshi

  Semiconductor & Integrated Circuits Div. Hitachi Ltd.

• IRIE Ryotaro

  Central Research Laboratory, Hitachi, Ltd.

• Irie Ryotaro

  Central Research Laboratory Hitachi Ltd.

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著作論文

• Surface Segregation Behaviors of B, Ga, and Sb during Si Molecular Beam Epitaxy : Calculation Using a First-Principles Method
• Surface Segregation Behaviors of B, Ga, and Sb during Si-MBE : Calculation Using a First-Principle Method
• Peroxy Linkage Defects in SiO_2 Examined through First-Principles Calculations : Defect Formation, Boron Binding, and Charged States of the B Adduct
• Dependence of Hopping-Conduction Energy of Holes on Distance between Trap Sites in SiO_2 : a Molecular Orbital Calculation
• Incorporation of N into Si/SiO_2 Interfaces : Molecular Orbital Calculations for Evaluating Interface Strain and Heat of Reaction
• Hopping-Conduction Energy of Holes in SiO_2 Determined Accurately by Molecular Orbital Calculation
• Molecular Orbital Theory Examination into the Improvement of Gate Oxide Integrity with the Incorporation of Nitrogen and Fluorine
• Dissociative Adsorption Mechanism of Product Gas in W-CVD Revealed by Molecular Orbital Calculation and Its Determinant Role in Filling Features

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