Kobayashi Nobuyoshi | Semiconductor Development Center Semiconductor & Integrated Circuits Division Hitachi Ltd.
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概要
- KOBAYASHI Nobuyoshiの詳細を見る
- 同名の論文著者
- Semiconductor Development Center Semiconductor & Integrated Circuits Division Hitachi Ltd.の論文著者
関連著者
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Kobayashi Nobuyoshi
Semiconductor Development Center Semiconductor & Integrated Circuits Division Hitachi Ltd.
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Kobayashi Nobuyoshi
Semiconductor & Integrated Circuits Div. Hitachi Ltd.
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NAGAI Ryo
Semiconductor & Integrated Circuits Div., Hitachi, Ltd.
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Hisamoto D
Central Research Laboratory Hitachi Ltd.
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Hisamoto Digh
Central Research Laboratory Hitachi Ltd.
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Kobayashi N
Semiconductor Development Center Semiconductor & Integrated Circuits Division Hitachi Ltd.
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Umeda Kazunori
Institute Of Mechanical Systems Engineering National Institute Of Advanced Industrial Science And Te
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Umeda Kazunori
Central Research Laboratory Hitachi Ltd.
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Nagai Ryo
Semiconductor Development Center Semiconductor & Integrated Circuits Division Hitachi Ltd.
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Nakamura Yoshitaka
Semiconductor Development Center, Semiconductor & Integrated Circuits Division, Hitachi, Ltd.,
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Nakamura Yoshitaka
Semiconductor Development Center Semiconductor & Integrated Circuits Division Hitachi Ltd.
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USHIO Jiro
Advanced Research Laboratory, Hitachi Ltd.
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MARUIZUMI Takuya
Advanced Research Laboratory, Hitachi Ltd.
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HISAMOTO Digh
Central Research Laboratory, Hitachi, Ltd.
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USHIO Jiro
Central Research Laboratory, Hitachi, Ltd.
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MARUIZUMI Takuya
Central Research Laboratory, Hitachi, Ltd.
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Takemura Yoshiaki
Advanced Research Laboratory Hitachi Ltd.
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Takemura Yoshiaki
Central Research Laboratory Hitachi Ltd.
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IRIE Ryotaro
Central Research Laboratory, Hitachi, Ltd.
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Irie Ryotaro
Central Research Laboratory Hitachi Ltd.
著作論文
- Surface-Reaction-Controlled Tungsten CVD Technology for 0.1-µm Low-Resistive, Encroachment-Free CMOS-FET Applications
- Surface Reaction Controlled W-CVD Technology for 0.1-μm Low-Resistive, Encroachment-Free CMOS-FET Applications
- Dissociative Adsorption Mechanism of Product Gas in W-CVD Revealed by Molecular Orbital Calculation and Its Determinant Role in Filling Features