NAGAI Ryo | Semiconductor & Integrated Circuits Div., Hitachi, Ltd.

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概要

• 同名の論文著者
• Semiconductor & Integrated Circuits Div., Hitachi, Ltd.の論文著者

関連著者

• NAGAI Ryo

  Semiconductor & Integrated Circuits Div., Hitachi, Ltd.

• Umeda Kazunori

  Central Research Laboratory Hitachi Ltd.

• Kobayashi Nobuyoshi

  Semiconductor Development Center Semiconductor & Integrated Circuits Division Hitachi Ltd.

• Kobayashi Nobuyoshi

  Semiconductor & Integrated Circuits Div. Hitachi Ltd.

• Hisamoto D

  Central Research Laboratory Hitachi Ltd.

• Hisamoto Digh

  Central Research Laboratory Hitachi Ltd.

• Kobayashi N

  Semiconductor Development Center Semiconductor & Integrated Circuits Division Hitachi Ltd.

• Umeda Kazunori

  Institute Of Mechanical Systems Engineering National Institute Of Advanced Industrial Science And Te

• Nagai Ryo

  Semiconductor Development Center Semiconductor & Integrated Circuits Division Hitachi Ltd.

• Nakamura Yoshitaka

  Semiconductor Development Center, Semiconductor & Integrated Circuits Division, Hitachi, Ltd.,

• Nakamura Yoshitaka

  Semiconductor Development Center Semiconductor & Integrated Circuits Division Hitachi Ltd.

• TANIGAWA Shoichiro

  Institute of Materials Science, The University of Tsukuba

• UEDONO Akira

  Institute of Materials Science, University of Tsukuba

• Uedono A

  Univ. Tsukuba Tsukuba Jpn

• KAWANO Takao

  Radioisotope Center,University of Tsukuba

• Kawano Takao

  Radioisotope Center University Of Tsukuba

• Kawano T

  Osaka Univ. Osaka Jpn

• Moriya T

  Institute Of Material Science University Of Tsukuba

• MORIYA Tsuyoshi

  Institute of Materials Science, University of Tsukuba

• HISAMOTO Digh

  Central Research Laboratory, Hitachi, Ltd.

• Tanigawa Shoichiro

  Institute Of Applied Physics University Of Tsukuba

• Moriya Tsuyoshi

  Institute Of Material Science University Of Tsukuba

• UMEDA Kazunori

  Central Research Laboratory, Hitachi, Ltd.

• Moriya T

  Tokyo Metropolitan University Graduate School Of Engineering

• Uedono Akira

  Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan

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著作論文

• Formation of Oxygen-Related Defects Enhanced by Fluorine in BF^+_2-Implanted Si Studied by a Monoenergetic Positron Beam
• Surface-Reaction-Controlled Tungsten CVD Technology for 0.1-µm Low-Resistive, Encroachment-Free CMOS-FET Applications
• Surface Reaction Controlled W-CVD Technology for 0.1-μm Low-Resistive, Encroachment-Free CMOS-FET Applications

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