MORIYA Tsuyoshi | Institute of Materials Science, University of Tsukuba
スポンサーリンク
概要
関連著者
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TANIGAWA Shoichiro
Institute of Materials Science, The University of Tsukuba
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UEDONO Akira
Institute of Materials Science, University of Tsukuba
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Uedono A
Univ. Tsukuba Tsukuba Jpn
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Moriya T
Institute Of Material Science University Of Tsukuba
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MORIYA Tsuyoshi
Institute of Materials Science, University of Tsukuba
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Moriya T
Tokyo Metropolitan University Graduate School Of Engineering
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KAWANO Takao
Radioisotope Center,University of Tsukuba
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Kawano T
Osaka Univ. Osaka Jpn
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Tanigawa Shoichiro
Institute Of Applied Physics University Of Tsukuba
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Moriya Tsuyoshi
Institute Of Material Science University Of Tsukuba
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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Uedono Akira
Institute Of Applied Physics University Of Tsukuba
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Kawano Takao
Radioisotope Center University Of Tsukuba
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MIKADO Tomohisa
National Institute of Advanced Industrial Science and Technology (AIST)
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TOYAMA Masaharu
Toshiba Research and Development Center
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Tanigawa S
Institute Of Applied Physics University Of Tsukuba
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Mikado T
Electrotechnical Laboratory
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Mikado Tomohisa
Institute Of Materials Science University Of Tsukuba
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MIKADO Tomohisa
Electrotechnical Laboratory
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Kitano T
Tokyo Electron Kyushu Ltd. Kumamoto Jpn
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Kawano T
Tokyo Electron Kyushu Ltd. Kumamoto Jpn
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Kitano T
Fundamental Research Laboratories Nec Corporation
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Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology
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Ohdaira Toshiyuki
Department Of Nuclear Engineering Kyoto University
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Mikado Tomohisa
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
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Ohshima Takeshi
Japan Atomic Energy Research Institute (jaeri)
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Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology (aist)
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Ohgaki Takeshi
National Inst. For Materials Sci.
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Ohshima T
Japan Atomic Energy Res. Inst. Takasaki Jpn
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Ohgaki T
National Institute For Materials Science (nims)
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SUZUKI Ryoichi
Electrotechnical Laboratory
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Suzuki R
National Institute Of Advanced Industrial Science And Technology
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Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology
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OHDAIRA Toshiyuki
Electrotechnical Laboratory
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Kitano Tomohisa
Ulsi Device Development Laboratories Nec Corporation
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WATANABE Masahito
ULSI Device Development Laboratories, NEC Corporation
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KOMURO Naoyuki
Institute of Materials Science, University of Tsukuba
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伊藤 晴雄
千葉工業大学
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ITOH Hisayoshi
Japan Atomic Energy Research Institute
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FUJII Satoshi
Itami Research Laboratories. Sumitomo Electric Industries, Ltd.
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Ebe Hiroji
Nanoelectronics Collaborative Research Center (ncrc) Institute Of Industrial Science (iis) The Unive
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Ebe Hiroji
Fujitsu Laboratories Ltd.
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Itoh H
Japan Atomic Energy Research Institute Takasaki Radiation Chemistry Research Establishment
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Itoh Hisayoshi
Japan Atomic Energy Agency
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Ebe H
Univ. Tokyo Tokyo Jpn
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Watanabe M
Hiroshima Univ. Higashi‐hiroshima Jpn
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OHSHIMA Takeshi
Japan Atomic Energy Research Institute
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Aoki Yasushi
Japan Atomic Energy Research Institute
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Aoki Y
Department Of Materials Development Japan Atomic Energy Research Institute
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Ikari Atsushi
Kimura Metamelt Project Erato Jrdc:(present Address) Advanced Technology Research Laboratories Nippo
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Ikari Atsushi
Advanced Technology Research Laboratories Nippon Steel Corporation
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Aoki Yuji
Superconductivity Research Laboratory Istec
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Fujii Syuitsu
Adtec Co. Ltd.
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OKUMURA Hajime
Electrotechnical Laboratory (ETL)
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Watanabe Mahiko
Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University
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Miyamoto Yoshihiro
Fujitsu Laboratories Ltd.
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Miyamoto Y
Kyushu Univ. Fukuoka Jpn
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Okumura H
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
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Okumura H
Electrotechnical Lab. Ibaraki Jpn
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Okumura Hajime
Electrotechnical Laboratory
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Yamamoto K
Univ. Of Tsukuba
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YOSHIKAWA Masahito
Japan Atomic Energy Research Institute, Takasaki Radiation Chemistry Research Establishment
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NASHIYAMA Isamu
Japan Atomic Energy Research Institute
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YOSHIDA Sadafumi
Electrotechnical Laboratory
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YAMAMOTO Kosaku
Fujitsu Laboratory Ltd.
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OZAKI Kazuo
Fujitsu Laboratories, Ltd.
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Yoshida Sadafumi
Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita
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Yoshikawa Masahito
Japan Atomic Energy Research Institute (jaeri)
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Yoshikawa Masahito
Japan Atomic Energy Research Institute
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HAMADA Kouji
ULSI Device Development Laboratories, NEC Corporation
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NAGAI Ryo
Semiconductor & Integrated Circuits Div., Hitachi, Ltd.
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UMEDA Kazunori
Central Research Laboratory, Hitachi, Ltd.
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Fujii Sadao
Central Research Laboratory Kanegafuchi Chemical Industry Co.
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Yamamoto K
Kaneka Corporation
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Fujii S
Matsushita Electronics Corp. Kyoto Jpn
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Aoki Y
Advanced Technology Research Center Kanagawa Institute Of Technology
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Ozaki K
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Hamada Kouji
Ulsi Device Development Laboratories Nec Corporation
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Komuro Naoyuki
Institute Of Materials Science University Of Tsukuba
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Okunuma H
National Institute Of Advanced Industrial Science And Technology
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Furuta Shigeru
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Miyamoto Y
Department Of Physical Electronics Tokyo Institute Of Technology
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Yamamoto K
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Umeda Kazunori
Central Research Laboratory Hitachi Ltd.
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Nashiyama I
Japan Atomic Energy Research Institute
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Fujii S
Adtec Plasma Technol. Co. Ltd. Fukuyama Jpn
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Yamamoto K
Saga Univ. Saga Jpn
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Ohshima Takeshi
Japan Atomic Energy Agency
著作論文
- Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
- A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
- Annealing Properties of Defects in B^+- and F^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
- Positron Annihilation in Germanium in Thermal Equilibrium at High Temperature
- Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Formation of Oxygen-Related Defects Enhanced by Fluorine in BF^+_2-Implanted Si Studied by a Monoenergetic Positron Beam
- Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam