Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-04-15

著者

• SUZUKI Ryoichi

  Electrotechnical Laboratory

• MIKADO Tomohisa

  Electrotechnical Laboratory

• TANIGAWA Shoichiro

  Institute of Materials Science, The University of Tsukuba

• UEDONO Akira

  Institute of Materials Science, University of Tsukuba

• Ohdaira Toshiyuki

  National Institute Of Advanced Industrial Science And Technology

• Ohdaira Toshiyuki

  Department Of Nuclear Engineering Kyoto University

• Uedono A

  Univ. Tsukuba Tsukuba Jpn

• Uedono Akira

  Institute Of Applied Physics University Of Tsukuba

• KAWANO Takao

  Radioisotope Center,University of Tsukuba

• Kitano T

  Tokyo Electron Kyushu Ltd. Kumamoto Jpn

• Kawano Takao

  Radioisotope Center University Of Tsukuba

• Suzuki R

  National Institute Of Advanced Industrial Science And Technology

• Kawano T

  Osaka Univ. Osaka Jpn

• Moriya T

  Institute Of Material Science University Of Tsukuba

• Suzuki Ryoichi

  National Institute Of Advanced Industrial Science And Technology

• MIKADO Tomohisa

  National Institute of Advanced Industrial Science and Technology (AIST)

• Kawano T

  Tokyo Electron Kyushu Ltd. Kumamoto Jpn

• OHDAIRA Toshiyuki

  Electrotechnical Laboratory

• MORIYA Tsuyoshi

  Institute of Materials Science, University of Tsukuba

• Kitano T

  Fundamental Research Laboratories Nec Corporation

• Kitano Tomohisa

  Ulsi Device Development Laboratories Nec Corporation

• Mikado Tomohisa

  Photonics Research Institute National Institute Of Advanced Industrial Science And Technology

• Ohshima Takeshi

  Japan Atomic Energy Research Institute (jaeri)

• Ohdaira Toshiyuki

  National Institute Of Advanced Industrial Science And Technology (aist)

• Tanigawa Shoichiro

  Institute Of Applied Physics University Of Tsukuba

• Moriya Tsuyoshi

  Institute Of Material Science University Of Tsukuba

• WATANABE Masahito

  ULSI Device Development Laboratories, NEC Corporation

• Moriya T

  Tokyo Metropolitan University Graduate School Of Engineering

• TOYAMA Masaharu

  Toshiba Research and Development Center

• Ohgaki Takeshi

  National Inst. For Materials Sci.

• Tanigawa S

  Institute Of Applied Physics University Of Tsukuba

• Ohshima T

  Japan Atomic Energy Res. Inst. Takasaki Jpn

• Mikado T

  Electrotechnical Laboratory

• Ohgaki T

  National Institute For Materials Science (nims)

• Mikado Tomohisa

  Institute Of Materials Science University Of Tsukuba

• Uedono Akira

  Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan

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