Effects of the Fermi Level on Defects in Be^+-Implanted GaAs Studied by a Monoenergetic Positron Beam

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-12-01

著者

• Kametani Hitoshi

  General Research Laboratory Mitubishi Electric Corporation

• TANIGAWA Shoichiro

  Institute of Materials Science, The University of Tsukuba

• UEDONO Akira

  Institute of Materials Science, University of Tsukuba

• Uedono A

  Univ. Tsukuba Tsukuba Jpn

• Uedono Akira

  Institute Of Applied Physics University Of Tsukuba

• KONDO Hitoshi

  Institute of Materials Science,University of Tsukuba

• Kondo H

  The Institute Of Scientific And Industrial Research Osaka University

• WEI Long

  Institute of Materials Science, University of Tsukuba

• Wei L

  Institute Of Materials Science University Of Tsukuba

• Wei Long

  Institute Of Materials Science University Of Tsukuba

• Kondo Hideyuki

  Central Research Institute Mitsubishi Materials Corporation

• 和田 健司

  大阪府立大学 大学院工学研究科

• Wada K

  Osaka Prefecture University

• Wada Kazumi

  NTT LSI Laboratories

• TABUKI Yasushi

  Institute of Materials Science, University of Tsukuba

• NAKANISHI Hideo

  NTT LSI Laboratories

• Tabuki Yasushi

  Institute Of Materials Science University Of Tsukuba

• Tanigawa Shoichiro

  Institute Of Applied Physics University Of Tsukuba

• Kondo H

  Nikon Corp.

• Nakanishi H

  Tohoku Univ. Sendai Jpn

• Tanigawa S

  Institute Of Applied Physics University Of Tsukuba

• Nakanishi H

  Department Of Electrical Engineering Science University Of Tokyo

• Kondo Hitoshi

  Institute Of Materials Science University Of Tsukuba

• Uedono Akira

  Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan

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