Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-03-15
著者
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Koida Takashi
Nicp Exploratory Research For Advanced Technology (erato) Japan Science And Technology Agency (jst)
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UEDONO Akira
Institute of Materials Science, University of Tsukuba
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SUMIYA Masatomo
Department of Electrical and Electronic Engineering, Faculty of Engineering
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AOYAMA Toyomi
Materials and Structures Labolatory, Tokyo Institute of Technology
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CHICHIBU Shigefusa
Institute of Applied Physics, University of Tsukuba
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SUGIYAMA Mutsumi
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba
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NOSAKA Taiki
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba
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SUZUKI Tomonori
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba
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KOIDA Takashi
NICP, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency (JST
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NAKAJIMA Kiyomi
COMET-NIMS, National Institute for Materials Science
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CHIKYOW Toyohiro
COMET-NIMS, National Institute for Materials Science
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