AOYAMA Toyomi | Materials and Structures Labolatory, Tokyo Institute of Technology
スポンサーリンク
概要
関連著者
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AOYAMA Toyomi
Materials and Structures Labolatory, Tokyo Institute of Technology
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CHICHIBU Shigefusa
Institute of Applied Physics, University of Tsukuba
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SUMIYA Masatomo
Department of Electrical and Electronic Engineering, Faculty of Engineering
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NAKAJIMA Kiyomi
National Institute for Mateirals Science
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SUGIYAMA Mutsumi
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba
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NOSAKA Taiki
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba
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NAKAJIMA Kiyomi
COMET-NIMS, National Institute for Materials Science
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CHIKYOW Toyohiro
COMET-NIMS, National Institute for Materials Science
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ONUMA Takeyoshi
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba
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Aoyama Toyomi
Materials And Structures Labolatory Tokyo Institute Of Technology
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Nakajima Kiyomi
National Institute For Material Science
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FUKUMURA Tomoteru
Institute for Materials Research, Tohoku University
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KAWASAKI Masashi
Institute for Materials Research, Tohoku University
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Yamada Yasuhiro
Institute Of Materials Research Tohoku University
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Koida Takashi
Nicp Exploratory Research For Advanced Technology (erato) Japan Science And Technology Agency (jst)
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Fuke Shunro
Department Of Electrical And Electronic Engineering Shizuoka University
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Fuke Shunro
Department Of Electrical & Electronic Engineering Shizuoka University
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Fukumura Tomoteru
Institute For Materials Research Tohoku University
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Fukumura T
Tohoku Univ. Sendai Jpn
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Kawasaki M
Tohoku Univ. Sendai Jpn
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UEDONO Akira
Institute of Materials Science, University of Tsukuba
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Segawa Y
Riken Sendai Jpn
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Segawa Yusaburo
Photodynamics Research Center The Institute Of Physical And Chemical Research (riken)
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Kawasaki Masashi
Institute For Materials Research (imr) Tohoku University
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KOINUMA Hideomi
Materials and Structures Laboratory, Tokyo Institute of Technology
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TAMURA Kentaro
Institute of Materials Research, Tohoku University
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TSUKAZAKI Atsushi
Institute of Materials Research, Tohoku University
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CHIKYOW Toyohiro
National Institute for Mateirals Science
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HASEGAWA Tetsuya
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Segawa Yusaburo
Photodynamics Research Center Riken
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Ahmet Parhat
National Institute For Materials Science
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Ahmet P
Comet-nims National Institute For Materials Science
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MUKAI Takashi
Nitride Semiconductor Research Laboratory, Nichia Corporation
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Segawa Yusaburo
Photodynamics Research Center Frontier Research Program The Institute Of Physical And Chemical Resea
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Mukai Takashi
Nitride Semiconductor Research Laboratory Nichia Corporation
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SOTA Takayuki
Department of Electrical, Electronics, and Computer Engineering, Waseda University
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SUZUKI Tomonori
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba
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KOIDA Takashi
NICP, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency (JST
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Koinuma Hideomi
Materials And Structures Labolatory Tokyo Institute Of Technology
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Sota T
Waseda Univ. Tokyo Jpn
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Sota Takayuki
Graduate School Of Science And Engineering Waseda University
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AHMET Parhat
COMET-NIMS
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NAGAHAMA Shin-ichi
Nitride Semiconductor Research Laboratory, Nichia Corporation
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Hasegawa T
Setsunan Univ. Hirakata Jpn
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Koinuma Hideomi
Frontier Collaborative Research Center And Ceramics Materials And Structures Laboratory
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Koinuma Hideomi
Ceramic Materials And Structures Laboratory:crest Japan Science And Technology Corporation
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Koinuma Hideomi
Frontier Collaborative Research Center Tokyo Institute Of Technology:crest-japan Science And Tecimol
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Sota Takayuki
Department Of Electric Electronics And Computer Engineering Waseda University
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Sota T
Graduate School Of Science And Engineering Waseda University
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Nakajima K
National Institute For Mateirals Science
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Onuma Tsuyoshi
Institute Of Applied Physics And Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Tamura Kentaro
Institute Of Materials Research Tohoku University
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Tamura Kentaro
Institute For Global Environmental Strategies
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AZUHATA Takashi
Department of Materials Science and Technology, Hirosaki University
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Azuhata Takashi
Department Of Materials Science And Technology Hirosaki University
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Chichibu S
Institute Of Applied Physics And Graduate School Of Pure And Applied Sciences University Of Tsukuba
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CHIKYOW Toyohiro
Materials and Structures Laboratory, Tokyo Institute of Technology
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Chichibu Shigefusa
Institute Of Applied Physics And 21st Century Center-of-excellence Office University Of Tsukuba
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Hasegawa Tetsuya
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Tsukazaki Atsushi
Institute For Materials Research (imr) Tohoku University
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Aoyama Toyomi
Materials And Structures Laboratory Tokyo Institute Of Technology
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Tsukazaki Atsushi
Institute Of Materials Research Tohoku University
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Sumiya Masatomo
Advanced Photovoltaics Center National Institute For Materials Science
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Sumiya Masatomo
Department Of Electrical And Electronic Engineering Shizuoka University
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Sumiya Masatomo
Department Of Electrical & Electronic Engineering Shizuoka University
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Nagahama Shin-ichi
Nitride Semiconductor Research Laboratory Nichia Corporation
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Ahmet Parhat
National Institute For Material Science
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Chikyow Toyohiro
National Inst. Materials Sci. Ibaraki Jpn
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Sumiya Masatomo
National Inst. Materials Sci. Ibaraki Jpn
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Kawasaki Masashi
Institute For Chemical Research Kyoto University
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Chikyow Toyohiro
Materials And Structures Laboratory Tokyo Institute Of Technology
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FUKUMURA Tomoteru
Institute for Materials Research
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AZUHATA Takashi
Department of Electrical, Electronics and Computer Engineering, Waseda University
著作論文
- Magneto-Optical Spectroscopy of Anatase TiO_2 Doped with Co
- Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy
- Critical Roles of Decomposition-Shielding Layer Deposited at Low Temperature Governing the Structural and Photoluminescence Properties of Cubic GaN Epilayers Grown on (001) GaAs by Metalorganic Vapor Phase Epitaxy
- Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450nm