Molecular Beam Epitaxy of Wurtzite GaN-Based Magnetic Alloy Semiconductors : Semiconductors
スポンサーリンク
概要
- 論文の詳細を見る
The preparation of hexagonal GaN:Mn and GaN:Fe epilayers has been studied by RF-plasma-assisted molecular beam epitaxy. GaN:Fe epilayers exhibit superparamagnetic behavior, presumably due to ferromagnetic inclusions. GaN:Mn epilayers can be expressed in the form of Ga_<1-x>Mn_xN with x up to 0.02, indicating the successful preparation of the GaN-based magnetic alloy semiconductor for the first time. The epilayers are primarily paramagnetic and highly resistive. For epilayers with very high Mn concentration (- 10^<21> cm^-3), analysis of the paramagnetic component has revealed the effective spin number S 〓 2.5 together with the positive paramagnetic Curie temperature. This suggests the presence of ferromagnetic spin exchange between Mn ions.
- 社団法人応用物理学会の論文
- 2001-07-15
著者
-
CHIKYOW Toyohiro
COMET-NIMS, National Institute for Materials Science
-
MUNEKATA Hiroo
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
-
Chikyow Toyohiro
Comet In National Institute For Research In Inorganic Materials:national Research Institute For Meta
-
Kondo Tsuyoshi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
-
Munekata Hiroo
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
-
KUWABARA Seiji
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
-
AHMETI Parhat
COMET in National Institute for Research in Inorganic Materials
-
Kuwabara Seiji
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
関連論文
- Magnetization Reversal Process of Submicrometer-Scale Hall Bars of Ferromagnetic Semiconductor p-In_Mn_As
- Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy
- A Quaternary Magnetic Alloy Semiconductor (Ga, In, Mn)N
- Contribution of Shape Anisotropy to the Magnetic Configuration of (Ga, Mn)As
- Characterization of Double-Buffer Layers and Its Application for the Metalorganic Vapor Phase Epitaxial Growth of GaN
- Pulsed Laser Epitaxy and Magnetic Properties of Single Phase Y-Type Magnetoplumbite Thin Films
- Critical Roles of Decomposition-Shielding Layer Deposited at Low Temperature Governing the Structural and Photoluminescence Properties of Cubic GaN Epilayers Grown on (001) GaAs by Metalorganic Vapor Phase Epitaxy
- Investigation of Spin Voltaic Effect in a p-n Heterojunction
- Preparation and Characterization of Fe-Based III-V Diluted Magnetic Semiconductor(Ga, Fe)As
- Three-Step Molecular Beam Deposition of Crystalline Polydiacetylene Films on Semiconductor Substrates with Large Crystal Domains
- Molecular Beam Epitaxy of Wurtzite GaN-Based Magnetic Alloy Semiconductors : Semiconductors
- Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy
- Critical Roles of Decomposition-Shielding Layer Deposited at Low Temperature Governing the Structural and Photoluminescence Properties of Cubic GaN Epilayers Grown on (001) GaAs by Metalorganic Vapor Phase Epitaxy
- Contribution of Shape Anisotropy to the Magnetic Configuration of (Ga, Mn)As
- A Quaternary Magnetic Alloy Semiconductor (Ga,In,Mn)N
- Effect of Light Illumination on Magnetization in Metamagnet Fe3Ga4 Grains Formed on GaAs Substrates
- Magnetization Reversal Process of Submicrometer-Scale Hall Bars of Ferromagnetic Semiconductor $p$-In0.97Mn0.03As
- Investigation of Spin Voltaic Effect in a $ p$–$n$ Heterojunction
- Characterization of Double-Buffer Layers and Its Application for the Metalorganic Vapor Phase Epitaxial Growth of GaN