Defect Production in Phosphorus Ion-Implanted SiO_2(43 nm)/Si Studied by a Variable-Energy Positron Beam

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-02-15

著者

• Kametani Hitoshi

  General Research Laboratory Mitubishi Electric Corporation

• TANIGAWA Shoichiro

  Institute of Materials Science, The University of Tsukuba

• UEDONO Akira

  Institute of Materials Science, University of Tsukuba

• KONDO Hitoshi

  Institute of Materials Science,University of Tsukuba

• Ogasawara M

  Hitachi Ltd. Tokyo Jpn

• WEI Long

  Institute of Materials Science, University of Tsukuba

• DOSHO Chisei

  Institute of Materials Science, University of Tsukuba

• SUGIURA Jun

  Device Development Center, Hitachi Ltd.

• OGASAWARA Makoto

  Device Development Center, Hitachi Ltd.

• Shouguchi Junko

  Department Of Life Science Faculty Of Bioscience And Biotechnology Tokyo Institute Of Technology

• Wei Long

  Institute Of Materials Science University Of Tsukuba

• Sugiura Jun

  Device Development Center Hitachi Ltd.

• Dosho Chisei

  Institute Of Materials Science University Of Tsukuba

• Ogasawara Makoto

  Device Development Center Hitachi Ltd.

• Tanigawa Shoichiro

  Institute Of Applied Physics University Of Tsukuba

• Ogasawara M

  Pioneer Corp. Saitama Jpn

• Kondo H

  Nikon Corp.

• Kondo Hitoshi

  Institute Of Materials Science University Of Tsukuba

• UEDONO Akira

  Institute of Materials Science, University of Tsukuba:(Present address)Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo

• Uedono Akira

  Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan

• KONDO Hitoshi

  Institute of Materials Science, University of Tsukuba

関連論文

• Characterization of Diamond Films by Means of a Pulsed Positron Beam
• Characterization of Diamond Films Synthesized on Si from a Gas Phase in Microwave Plasma by Slow Positrons
• Study on Momentum Density of Electrons and Fermi Surface in Niobium by Positron Annihilation
• Defect Production in Phosphorus Ion-Implanted SiO_2(43 nm)/Si Studied by a Variable-Energy Positron Beam
• Vacancy-Type Defects in As^+-Implanted SiO_2(43 nm)/Si Proved with Slow Positrons
• Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
• Positron Annihilation in Proton Irradiated Czochralski-Grown Si
• Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams
• Simulation of Light Scattering by a Particle on a Film-Coated Substrate Using Coupled-Dipole Method
• Light Scattering by Submicron Particles on Film-Coated Wafers
• Adsorption and Desorption of Metallic Impurities on Si Wafer Surface in SC1 Solution
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• Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams
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• Defects in Metalorganic Chemical Vapor Deposition Epitaxy-Grown ZnSe Films on GaAs Investigated by Monoenergetic Positrons
• The Defect Characterization of Heavily Si-doped Molecular Beam Epitaxy-Grown GaAs by the Monoenergetic Positron Method
• Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
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• Characterization of Column III Vacancies in Al_xGa_As/GaAs Heterostructures Grown by Molecular Beam Epitaxy through Slow Positrons
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• The Effect of Surface Oxides on the Creation of Point Defects in GaAs Studied by Slow Positron Beam
• Defect Evaluation of Heavily P-Doped Si Epitaxial Films Grown at Low Temperature
• Identification of Vacancy-Type Defects in Molecular Beam Epitaxy-Grown GaAs Using a Slow Positron Beam
• Effects of the Fermi Level on Defects in Be^+-Implanted GaAs Studied by a Monoenergetic Positron Beam
• Study of Point Defects in Bulk ZnSe Grown by Nonstoichiometric Annealing
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• Oxygen Microclusters in Czochralski-Grown Si Probed by Positron Annihilation
• Positron Annihilation in Vitreous Silica Glasses
• Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices
• Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
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• A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
• Reversible Photodissociation of Hexacarbonyl Tungsten in Cross-Linked Polymers
• Annealing Properties of Defects in B^+- and F^+-Implanted Si Studied Using Monoenergetic Positron Beams
• Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
• Positron Annihilation in Germanium in Thermal Equilibrium at High Temperature
• Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
• Formation of Oxygen-Related Defects Enhanced by Fluorine in BF^+_2-Implanted Si Studied by a Monoenergetic Positron Beam
• Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam
• Oxygen-Related Defects Introduced by As^+-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams
• Investigation of Vacancy-Type Defects in P^+-Implanted 6H-SiC Using Monoenergetic Positron Beams
• Defects in TiN Films Probed by Monoenergetic Positron Beams
• Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams
• Defects in Heavily Phosphorus-Doped Si Epitaxial Films Probed by Monoenergetic Positron Beams
• Recovery of SEM Image by In-Situ Cleaning of Contaminated Objective Aperture
• Reduction of Electron Beam Drift Caused by Deflecting Electrode by Downflow Cleaning Process
• Filling a Double-Cusp Magnetic Container with Plasmas Produced by a Long-Pulse CO_2-Laser and Its Confinement Properties
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• Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation
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• Defects Introduced by Ar Plasma Exposure in GaAs Probed by Monoenergetic Positron Beam
• Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
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• Study of Transmittance of Polymers and Influence of Photoacid Generator on Resist Transmittance at Extreme Ultraviolet Wavelength
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• Compatibilization of Metallocene Polyethylene/Polyamide Blends with Maleic Anhydride Studied by Positron Annihilation
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• The Anomalous Temperature Dependence of Positron Annihilation in Dilute Al-Li and Al-Mg Alloys
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• Oxygen Clusters in Quenched Czochralski-Si Studied by Infrared Spectroscopy and Positron Annihilation
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• Particle Contamination Control Technology in Electron Beam Mask Writing System for Next-Generation Mask Fabrication
• Positron Study of Electron Momentum Density and Fermi Surface in Titanium and Zirconium
• Slow Positron Beam Apparatus for Surface and Subsurface Analysis of Samples in Air
• Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
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• Variation of Chemical Vapor Deposited SiO Density Due to Generation and Shrinkage of Open Space During Thermal Annealing
• Study of Interactions of Hf and SiO2 Film for High-$k$ Materials
• Local Bonding Structure of High-Stress Silicon Nitride Film Modified by UV Curing for Strained Silicon Technology beyond 45 nm Node SoC Devices
• Impact of Residual Impurities on Annealing Properties of Vacancies in Electroplated Cu Studied Using Monoenergetic Positron Beams
• Positron Annihilation Study on Defects in HfSiON Films Deposited by Electron-Beam Evaporation
• Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam
• Characterization of Low-$k$/Cu Damascene Structures Using Monoenergetic Positron Beams
• Positron Annihilation in Germanium in Thermal Equilibrium at High Temperature
• Defects in Electroplated Cu and Their Impact on Stress Migration Reliability Studied using Monoenergetic Positron Beams
• Fluorine-Related Defects in BF2+-Implanted Si Probed by Monoenergetic Positron Beams
• Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation
• Evaluation of SOI Substrates by Positron Annihilation
• A Study of Vacancy-Type Defects in B+-Implanted SiO2/Si by a Slow Positron Beam
• Structure and Function in Escherichia coli of Plasmids Containing Pyrimidine/Purine-Biased Stretch Originated from the 5'-Flanking Region of the Basidiomycete ras Gene.

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