Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam

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概要

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• Vacancy-type defects in plasma immersion B-implanted Si were probed by a monoenergetic positron beam. Doppler broadening spectra of the annihilation radiation were measured and compared with spectra calculated using the projector augmented-wave method. For the as-doped sample, the vacancy-rich region was found to be localized at a depth of 0–10 nm, and the major defect species were determined to be divacancy–B complexes. After spike rapid thermal annealing at 1075 °C, the lineshape parameter $S$ of Doppler broadening spectra corresponding to the high-B-concentration region (4–30 nm) was found to be smaller than the characteristic $S$ value obtained for defect-free Si. From a detailed analysis of the Doppler broadening spectra, the origin of the decrease in the $S$ value was attributed to the trapping of positrons by negatively charged B clusters such as icosahedral B12.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-05-25

著者

• Ishibashi Shoji

  Research Institute For Computational Sciences (rics) National Institute Of Advanced Industrial Scien

• Tsutsui Kazuo

  Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology

• Uedono Akira

  Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan

• Akira Uedono

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Hiroshi Iwai

  Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan

• Hiroshi Iwai

  Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Hiromichi Watanabe

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Shoji Kubota

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Yasumasa Nakagawa

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Bunji Mizuno

  Ultimate Junction Technologies Inc., Moriguchi, Osaka 570-8501, Japan

• Takeo Hattori

  Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Shoji Ishibashi

  Research Institute for Computational Sciences, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan

• Kazuo Tsutsui

  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan

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