Fluoride Resonant Tunneling Diodes on Si Substrates Improved by the Additional Thermal Oxidation Process
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Tsutsui Kazuo
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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Watanabe Satoshi
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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Sugisaki Tsuyoshi
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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WATANABE So
Interdisciplinary Graduate School of Science & Engineering, Tokyo Institute of Technology
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MAEDA Motoki
Interdisciplinary Graduate School of Science & Engineering, Tokyo Institute of Technology
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Maeda Motoki
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
関連論文
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- Fluoride Resonant Tunneling Diodes on Si Substrates Improved by the Additional Thermal Oxidation Process
- Doping Effects from Neutral B2H6 Gas Phase on Plasma Pretreated Si Substrates as a Possible Process in Plasma Doping
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- Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam
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- Fluoride Resonant Tunneling Diodes on Si Substrates Improved by Additional Thermal Oxidation Process
- Fabrication of Fluoride Resonant Tunneling Diodes on V-Grooved Si(100) Substrates
- Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability (Special Issue : Solid State Devices and Materials)