Evaluation of Variable Energy Level of Conduction Band Edge on Fluoride Resonant Tunneling Diodes

スポンサーリンク

概要

• 論文の詳細を見る
• 2003-10-01

著者

• Tsutsui Kazuo

  Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology

• Watanabe Satoshi

  Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology

• WATANABE So

  Interdisciplinary Graduate School of Science & Engineering, Tokyo Institute of Technology

• MAEDA Motoki

  Interdisciplinary Graduate School of Science & Engineering, Tokyo Institute of Technology

• Maeda Motoki

  Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology

関連論文

• Evaluation of Variable Energy Level of Conduction Band Edge on Fluoride Resonant Tunneling Diodes
• Single-Electron Devices Formed by Self-Ordering Metal Nanodroplet Arrays on Epitaxial CaF_2 Film
• Multitunneling Junction of Metal Droplets Formed on CaF_2 Step Edges in a Self-Assembling Manner
• Multi-Tunnelling Junctions of Metal Droplets Formed on CaF2 Stepedges by Self-Assembling Manner
• Artificial Control of Dot Sites for Ga Droplet Arrays on CaF_2 Films by Surface Steps and Electron Beam Modifications ( Quantum Dot Structures)
• Site Control of Ga Droplet Array on CaF_2 by Surface Modification Using a Focused Electron Beam
• Site Control of Metal Droplet Formation on CaF_2 Surface Using a Focused Electron Beam
• Space-Charge-Limited Currents in La_2O_3 Thin Films Deposited by E-Beam Evaporation after Low Temperature Dry-Nitrogen Annealing
• Effects of Post Dielectric Deposition and Post Metallization Annealing Processes on Metal/Dy_2O_3/Si(100) Diode Characteristics
• Reactive Ion Etched II-VI Quantum Dots: Dependence of Etched Profile on Pattern Geometry
• Tight-Binding Calculation of Current Distribution in a Porphin Connected to Two Semi-Infinite Wires
• Heteroepitaxial Growth of CdF_2 Layers on CaF_2/Si(111) by Molecular Beam Epitaxy
• CdF_2/CaF_2 Resonant Tunneling Diode Fabricated on Si(111)
• CdF_2/CaF_2 Resonant Tunneling Diode Fabricated on Si(111)
• Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation
• Rare earth oxide capping effect on La2O3 gate dielectrics for equivalent oxide thickness scaling toward 0.5nm (Special issue: Dielectric thin films for future electron devices: science and technology)
• Optical In Situ Observation of Electron Beam Induced Surface Modification of Epitaxial Fluoride Films
• Silicate reaction control at lanthanum oxide and silicon interface for equivalent oxide thickness of 0.5nm: adjustment of amount of residual oxygen atoms in metal layer (Special issue: Dielectric thin films for future electron devices: science and technol
• Fluoride Resonant Tunneling Diodes Co-integrated with Si-MOSFETs
• Epitaxial Growth of Ca_xCd_F_2 Mixed Crystal Films on Si Substrates
• Effects of the Two-Step Growth Method for GaAs Grown on CaF_2/Si(111) with the Electron Beam Surface Modification Technique
• Selective Growth of Wire Structures of GaAs on CaF_2 Usimg Focused Electron Beams
• Fabrication of Fluoride Resonant Tunneling Diodes on V-grooved Si(100) Substrates
• Fluoride Resonant Tunneling Diodes on Si Substrates Improved by the Additional Thermal Oxidation Process
• Doping Effects from Neutral B2H6 Gas Phase on Plasma Pretreated Si Substrates as a Possible Process in Plasma Doping
• Capacitance--Voltage Characterization of La2O3 Metal--Oxide--Semiconductor Structures on In0.53Ga0.47As Substrate with Different Surface Treatment Methods
• Heteroepitaxy of Cd-Rich CaxCd1-xF2 Alloy on Si Substrates and Its Application to Resonant Tunneling Diodes
• Effect of Post-Metallization Annealing on Electrical Characteristics of La2O3 Gate Thin Films
• Characteristics of Ultrathin Lanthanum Oxide Films on Germanium Substrate: Comparison with Those on Silicon Substrate
• Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam
• Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability
• Fluoride Resonant Tunneling Diodes on Si Substrates Improved by Additional Thermal Oxidation Process
• Fabrication of Fluoride Resonant Tunneling Diodes on V-Grooved Si(100) Substrates
• Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability (Special Issue : Solid State Devices and Materials)

もっと見る 閉じる

スポンサーリンク