Heteroepitaxy of Cd-Rich CaxCd1-xF2 Alloy on Si Substrates and Its Application to Resonant Tunneling Diodes
スポンサーリンク
概要
- 論文の詳細を見る
Epitaxial growth of Cd-rich CaxCd1-xF2 alloy with small composition $x$ on Si(111) substrates was investigated in order to obtain improved fluoride resonant tunneling diodes (RTDs). The direct growth of CdF2 on Si substrates was studied from the viewpoint of surface roughening and sticking coefficient, and it was revealed that the origin of growth instability of CdF2 was the direct reactivity of CdF2 with Si. This phenomenon was controlled by addition of a small amount of CaF2 to CdF2, forming a Cd-rich CaxCd1-xF2 alloy. It was found that the growth temperature of Cd-rich CaxCd1-xF2 on bare Si at which apparent re-evaporation was observed was higher than that of pure CdF2, and that the surface roughness of the layers grown at room temperature on thin CaF2 buffer layers was reduced by the addition of only 5% CaF2 to CdF2. Furthermore, RTDs using the Cd-rich CaxCd1-xF2 layer for the quantum well layer were fabricated, and stable operation and improved characteristics were obtained compared to the conventional RTDs using pure CdF2 layers.
- 2003-04-15
著者
-
Tsutsui Kazuo
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
-
Kambayashi Hiroshi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
-
WATANABE So
Interdisciplinary Graduate School of Science & Engineering, Tokyo Institute of Technology
-
MAEDA Motoki
Interdisciplinary Graduate School of Science & Engineering, Tokyo Institute of Technology
-
Maeda Motoki
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
-
Watanabe So
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
関連論文
- Evaluation of Variable Energy Level of Conduction Band Edge on Fluoride Resonant Tunneling Diodes
- Single-Electron Devices Formed by Self-Ordering Metal Nanodroplet Arrays on Epitaxial CaF_2 Film
- Multitunneling Junction of Metal Droplets Formed on CaF_2 Step Edges in a Self-Assembling Manner
- Multi-Tunnelling Junctions of Metal Droplets Formed on CaF2 Stepedges by Self-Assembling Manner
- Artificial Control of Dot Sites for Ga Droplet Arrays on CaF_2 Films by Surface Steps and Electron Beam Modifications ( Quantum Dot Structures)
- Site Control of Ga Droplet Array on CaF_2 by Surface Modification Using a Focused Electron Beam
- Site Control of Metal Droplet Formation on CaF_2 Surface Using a Focused Electron Beam
- Space-Charge-Limited Currents in La_2O_3 Thin Films Deposited by E-Beam Evaporation after Low Temperature Dry-Nitrogen Annealing
- Effects of Post Dielectric Deposition and Post Metallization Annealing Processes on Metal/Dy_2O_3/Si(100) Diode Characteristics
- Reactive Ion Etched II-VI Quantum Dots: Dependence of Etched Profile on Pattern Geometry
- Heteroepitaxial Growth of CdF_2 Layers on CaF_2/Si(111) by Molecular Beam Epitaxy
- CdF_2/CaF_2 Resonant Tunneling Diode Fabricated on Si(111)
- CdF_2/CaF_2 Resonant Tunneling Diode Fabricated on Si(111)
- Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation
- Rare earth oxide capping effect on La2O3 gate dielectrics for equivalent oxide thickness scaling toward 0.5nm (Special issue: Dielectric thin films for future electron devices: science and technology)
- Optical In Situ Observation of Electron Beam Induced Surface Modification of Epitaxial Fluoride Films
- Silicate reaction control at lanthanum oxide and silicon interface for equivalent oxide thickness of 0.5nm: adjustment of amount of residual oxygen atoms in metal layer (Special issue: Dielectric thin films for future electron devices: science and technol
- Fluoride Resonant Tunneling Diodes Co-integrated with Si-MOSFETs
- Epitaxial Growth of Ca_xCd_F_2 Mixed Crystal Films on Si Substrates
- Effects of the Two-Step Growth Method for GaAs Grown on CaF_2/Si(111) with the Electron Beam Surface Modification Technique
- Selective Growth of Wire Structures of GaAs on CaF_2 Usimg Focused Electron Beams
- Fabrication of Fluoride Resonant Tunneling Diodes on V-grooved Si(100) Substrates
- Fluoride Resonant Tunneling Diodes on Si Substrates Improved by the Additional Thermal Oxidation Process
- Doping Effects from Neutral B2H6 Gas Phase on Plasma Pretreated Si Substrates as a Possible Process in Plasma Doping
- Capacitance--Voltage Characterization of La2O3 Metal--Oxide--Semiconductor Structures on In0.53Ga0.47As Substrate with Different Surface Treatment Methods
- Heteroepitaxy of Cd-Rich CaxCd1-xF2 Alloy on Si Substrates and Its Application to Resonant Tunneling Diodes
- Effect of Post-Metallization Annealing on Electrical Characteristics of La2O3 Gate Thin Films
- Characteristics of Ultrathin Lanthanum Oxide Films on Germanium Substrate: Comparison with Those on Silicon Substrate
- Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam
- Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability
- Fluoride Resonant Tunneling Diodes on Si Substrates Improved by Additional Thermal Oxidation Process
- Fabrication of Fluoride Resonant Tunneling Diodes on V-Grooved Si(100) Substrates
- Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability (Special Issue : Solid State Devices and Materials)