Heteroepitaxial Growth of CdF_2 Layers on CaF_2/Si(111) by Molecular Beam Epitaxy
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概要
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The effects of growth temperature and structural perfection of the CaF_2 buffer layer on the crystallinity of CdF_2 layers grown on CaF_2/Si(111) substrates by molecular beam epitaxy (MBE) were investigated by double-crystal X-ray diffractometry (XRD). The crystal perfection of CdF_2 layers grown on pseudomorphic CaF_2 layers was considerably better than that of CdF_2 layers grown on relaxed CaF_2 layers. It was shown that epitaxial CdF_2 films with high structural quality can be grown on the pseudomorphic CaF_2 layer at growth temperatures as low as 50℃.
- 社団法人応用物理学会の論文
- 1998-01-15
著者
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Sokolov Nikolai
Ioffe Physico-technical Institute Russian Academy Of Sciences
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IZUMI Akira
Japan Advanced Institute of Science and Technology (JAIST)
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TSUTSUI Kazuo
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Tsutsui K
Sony Corp. Tokyo Jpn
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Izumi A
School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)
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Tsutsui Kazuo
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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IZUMI Akira
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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