Fluoride Resonant Tunneling Diodes Co-integrated with Si-MOSFETs
スポンサーリンク
概要
- 論文の詳細を見る
Resonant tunneling diodes (RTDs) composed of heteroepitaxial CaF_2/CdF_2/CaF_2 structure grown on Si substrates were cointegrated with Si-metal oxide semiconductor field effect transistors (MOSFETs), and test circuits of the static random access memory (SRAM) cell were fabricated. The RTD structures were grown in the opened diode holes on the oxide film, where a high dose of phosphorus ions (P^+) had been implanted. Surface roughening of ion-implanted Si before the fluoride growth due to an increase of the ion dose was investigated, and the optimum dose was determined. Normal operations of both fluoride RTD and Si-MOSFET in the fabricated circuit were obtained. Bistable operation was also observed for the circuit in which two RTDs were connected in series. [DOI: 10.1143/JJAP.41.2598]
- 社団法人応用物理学会の論文
- 2002-04-30
著者
-
Sekine Hisashi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
-
Tsutsui Kazuo
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
-
Terayama Toshiaki
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
-
SEKINE Hiroshi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
-
Sekine Hiroshi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
関連論文
- Evaluation of Variable Energy Level of Conduction Band Edge on Fluoride Resonant Tunneling Diodes
- Single-Electron Devices Formed by Self-Ordering Metal Nanodroplet Arrays on Epitaxial CaF_2 Film
- Multitunneling Junction of Metal Droplets Formed on CaF_2 Step Edges in a Self-Assembling Manner
- Multi-Tunnelling Junctions of Metal Droplets Formed on CaF2 Stepedges by Self-Assembling Manner
- Artificial Control of Dot Sites for Ga Droplet Arrays on CaF_2 Films by Surface Steps and Electron Beam Modifications ( Quantum Dot Structures)
- Site Control of Ga Droplet Array on CaF_2 by Surface Modification Using a Focused Electron Beam
- Site Control of Metal Droplet Formation on CaF_2 Surface Using a Focused Electron Beam
- Size Dependence of Phonon Raman Spectra in Mn_2O_3 Nanocrystals
- Space-Charge-Limited Currents in La_2O_3 Thin Films Deposited by E-Beam Evaporation after Low Temperature Dry-Nitrogen Annealing
- Effects of Post Dielectric Deposition and Post Metallization Annealing Processes on Metal/Dy_2O_3/Si(100) Diode Characteristics
- Reactive Ion Etched II-VI Quantum Dots: Dependence of Etched Profile on Pattern Geometry
- Heteroepitaxial Growth of CdF_2 Layers on CaF_2/Si(111) by Molecular Beam Epitaxy
- CdF_2/CaF_2 Resonant Tunneling Diode Fabricated on Si(111)
- CdF_2/CaF_2 Resonant Tunneling Diode Fabricated on Si(111)
- Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation
- Rare earth oxide capping effect on La2O3 gate dielectrics for equivalent oxide thickness scaling toward 0.5nm (Special issue: Dielectric thin films for future electron devices: science and technology)
- Optical In Situ Observation of Electron Beam Induced Surface Modification of Epitaxial Fluoride Films
- Silicate reaction control at lanthanum oxide and silicon interface for equivalent oxide thickness of 0.5nm: adjustment of amount of residual oxygen atoms in metal layer (Special issue: Dielectric thin films for future electron devices: science and technol
- Fluoride Resonant Tunneling Diodes Co-integrated with Si-MOSFETs
- Fluoride Resonant Tunneling Diodes Co-Integrated with Si-MOSFETs
- Epitaxial Growth of Ca_xCd_F_2 Mixed Crystal Films on Si Substrates
- Effects of the Two-Step Growth Method for GaAs Grown on CaF_2/Si(111) with the Electron Beam Surface Modification Technique
- Selective Growth of Wire Structures of GaAs on CaF_2 Usimg Focused Electron Beams
- Fabrication of Fluoride Resonant Tunneling Diodes on V-grooved Si(100) Substrates
- Fluoride Resonant Tunneling Diodes on Si Substrates Improved by the Additional Thermal Oxidation Process
- Doping Effects from Neutral B2H6 Gas Phase on Plasma Pretreated Si Substrates as a Possible Process in Plasma Doping
- Capacitance--Voltage Characterization of La2O3 Metal--Oxide--Semiconductor Structures on In0.53Ga0.47As Substrate with Different Surface Treatment Methods
- Heteroepitaxy of Cd-Rich CaxCd1-xF2 Alloy on Si Substrates and Its Application to Resonant Tunneling Diodes
- Effect of Post-Metallization Annealing on Electrical Characteristics of La2O3 Gate Thin Films
- Characteristics of Ultrathin Lanthanum Oxide Films on Germanium Substrate: Comparison with Those on Silicon Substrate
- Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam
- Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability
- Fluoride Resonant Tunneling Diodes on Si Substrates Improved by Additional Thermal Oxidation Process
- Fabrication of Fluoride Resonant Tunneling Diodes on V-Grooved Si(100) Substrates
- Influence of Structural Parameters on Electrical Characteristics of Schottky Tunneling Field-Effect Transistor and Its Scalability (Special Issue : Solid State Devices and Materials)