Effect of Post-Metallization Annealing on Electrical Characteristics of La2O3 Gate Thin Films
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概要
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Annealing conditions of a lanthanum oxide (La2O3) metal–insulator–semiconductor (MIS) capacitor were studied in order to optimize the flat-band voltage ($V_{\text{FB}}$). It was confirmed that in the case of using Al electrodes, negative $V_{\text{FB}}$ shift was increased by post-deposition annealing (PDA) (before metallization) compared to as-deposited sample, while all other characteristics, such as EOT, leakage current and interface state density, were improved. It was also confirmed that post-metallization annealing (PMA) suppressed the $V_{\text{FB}}$ shift. Finally, the combination of PDA and PMA resulted in the recovery of $V_{\text{FB}}$ shift with suppression of the decrease of EOT. However, it was confirmed that in the case of using Au electrodes, PMA resulted in a slight negative $V_{\text{FB}}$ shift. Judging from these results, it is conceivable that the reaction of the metal with La2O3 exerts a significant influence on the $V_{\text{FB}}$ shift.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-02-15
著者
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Ohmi Shun-ichiro
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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KURIYAMA Atsushi
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Tsutsui Kazuo
Interdisciplinary Graduate School Of Science & Engineering Tokyo Institute Of Technology
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Iwai Hiroshi
Frontier Collaborative Research Center Tokyo Institute Of Technology
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Ohmi Shun-ichiro
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Iwai Hiroshi
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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