Vacancy-Type Defects in As^+-Implanted SiO_2(43 nm)/Si Proved with Slow Positrons
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-10-20
著者
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TANIGAWA Shoichiro
Institute of Materials Science, The University of Tsukuba
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UEDONO Akira
Institute of Materials Science, University of Tsukuba
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Ogasawara M
Hitachi Ltd. Tokyo Jpn
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SUGIURA Jun
Device Development Center, Hitachi Ltd.
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OGASAWARA Makoto
Device Development Center, Hitachi Ltd.
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Shouguchi Junko
Department Of Life Science Faculty Of Bioscience And Biotechnology Tokyo Institute Of Technology
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Sugiura Jun
Device Development Center Hitachi Ltd.
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Ogasawara Makoto
Device Development Center Hitachi Ltd.
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Tanigawa Shoichiro
Institute Of Applied Physics University Of Tsukuba
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Ogasawara M
Pioneer Corp. Saitama Jpn
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UEDONO Akira
Institute of Materials Science, University of Tsukuba:(Present address)Department of Physics, Yokohama City University
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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TANIGAWA Shoichiro
Institute of Materials Science, University of Tsukuba
関連論文
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- Study on Momentum Density of Electrons and Fermi Surface in Niobium by Positron Annihilation
- Defect Production in Phosphorus Ion-Implanted SiO_2(43 nm)/Si Studied by a Variable-Energy Positron Beam
- Vacancy-Type Defects in As^+-Implanted SiO_2(43 nm)/Si Proved with Slow Positrons
- Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
- Positron Annihilation in Proton Irradiated Czochralski-Grown Si
- Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams
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