Oxygen Microclusters in Czochralski-Grown Si Probed by Positron Annihilation

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-08-15

著者

• TANIGAWA Shoichiro

  Institute of Materials Science, The University of Tsukuba

• UEDONO Akira

  Institute of Materials Science, University of Tsukuba

• Itoh H

  Japan Atomic Energy Research Institute Takasaki Radiation Chemistry Research Establishment

• KAWANO Takao

  Radioisotope Center,University of Tsukuba

• WEI Long

  Institute of Materials Science, University of Tsukuba

• IKARI Atsushi

  Electronics R & D Laboratories, Nippon Steel Corporation

• Kawano Takao

  Radioisotope Center University Of Tsukuba

• Ikari A

  Wacker Nsce Corp. Yamaguchi Jpn

• Ikari Atsushi

  Kimura Metamelt Project Erato Jrdc:(present Address) Advanced Technology Research Laboratories Nippo

• Ikari Atsushi

  R&d Group Wacker Nsce Corporation

• Wei Long

  Institute Of Materials Science University Of Tsukuba

• Kawano T

  Osaka Univ. Osaka Jpn

• KAWAKAMI Kazuto

  Electronics R & D Laboratories, Nippon Steel Corporation

• ITOH Hisayoshi

  Takasaki Radiation Chemistry Research Establishment, Japan Atomic Energy Research Institute

• Tanigawa Shoichiro

  Institute Of Applied Physics University Of Tsukuba

• Uedono Akira

  Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan

• TANIGAWA Shoichiro

  Institute of Materials Science, University of Tsukuba

• KAWAKAMI Kazuto

  Electronics R & D Laboratories, Nippon Steel Corporation

関連論文

• MgOのγ測定を目的とした放電路の観測
• MgO薄膜の二次電離係数の決定
• 誘電体電極上の蓄積電荷により誘起されるDBDの自己組織化現象
• 千葉工業大学 工学部 電気電子情報工学科 電気工学コース・伊藤研究室
• 千葉工業大学 工学部 電気電子情報工学科 伊藤研究室
• 大気圧下における Townsend 放電の成立機構
• MgO薄膜の二次電子放出係数の検討
• 圧電トランスを用いたDBD型オゾン発生器の開発 : 誘電体材料がオゾン生成に及ぼす影響
• N_2(A^3〓^+_u)の大気汚染物質による衝突脱励起反応速度係数の決定
• 圧電トランスを用いた小型エキシマランプ
• 圧電トランス型小型プラズマリアクタの動作特性とその応用
• 負イオン移動度測定用高気圧ドリフト管の改良
• MgOなどの誘電体材料の二次電子放出係数の測定
• 真空紫外光によるN_2/O_2混合ガス中の光電離電流
• 無声放電電極用誘電体材料の二次電離係数の測定
• O_2/O_3混合ガス中におけるクラスター生成と負イオン移動度の減少
• LEDを光源とした光吸収法によるオゾン濃度測定
• 第三部:次世代技術は何か? 圧電トランスを用いた小型オゾン発生器のオゾン生成特性 (特集 放電学会春季合同シンポジウム) -- (ワークショップ オゾナイザはどこまで進歩するか)
• 大気中正極性沿面ストリーマの同期発生
• Characterization of Diamond Films by Means of a Pulsed Positron Beam
• Characterization of Diamond Films Synthesized on Si from a Gas Phase in Microwave Plasma by Slow Positrons
• Study on Momentum Density of Electrons and Fermi Surface in Niobium by Positron Annihilation
• Defect Production in Phosphorus Ion-Implanted SiO_2(43 nm)/Si Studied by a Variable-Energy Positron Beam
• Vacancy-Type Defects in As^+-Implanted SiO_2(43 nm)/Si Proved with Slow Positrons
• Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
• キシレンによるN2(A3Σu+)の失活とキシレン分解生成物の陰極表面への付着による電流阻止作用
• Positron Annihilation in Proton Irradiated Czochralski-Grown Si
• Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams
• Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy
• Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams
• Defects in Metalorganic Chemical Vapor Deposition Epitaxy-Grown ZnSe Films on GaAs Investigated by Monoenergetic Positrons
• The Defect Characterization of Heavily Si-doped Molecular Beam Epitaxy-Grown GaAs by the Monoenergetic Positron Method
• Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
• Variable-Energy Positron Studies of Vacancy-Type Defects in TiN Films on Si
• Amorphization Processes and Structural Relaxation in Ion Implanted Si
• Characterization of Column III Vacancies in Al_xGa_As/GaAs Heterostructures Grown by Molecular Beam Epitaxy through Slow Positrons
• Silicide-Formation-Induced Defects in Si Substrates in Ti/Si and Ni/Si Systems by a Monoenergetic Positron Beam
• Effect of Annealing Method on Vacancy-Type Defects in Si-Implanted GaAs Studied by a Slow Positron Beam
• The Effect of Surface Oxides on the Creation of Point Defects in GaAs Studied by Slow Positron Beam
• Defect Evaluation of Heavily P-Doped Si Epitaxial Films Grown at Low Temperature
• Identification of Vacancy-Type Defects in Molecular Beam Epitaxy-Grown GaAs Using a Slow Positron Beam
• Ar中におけるMgO薄膜の二次電離係数の測定
• Effects of the Fermi Level on Defects in Be^+-Implanted GaAs Studied by a Monoenergetic Positron Beam
• Study of Point Defects in Bulk ZnSe Grown by Nonstoichiometric Annealing
• Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their
• Measurements of the Depth Profile of the Refractive Indices in Oxide Films on SiC by Spectroscopic Ellipsometry
• Generation of Interface Traps and Oxide-Trapped Charge in 6H-SiC Metal-Oxide-Semiconductor Transistors by Gamma-Ray Irradiation
• Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
• Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
• Oxygen Microclusters in Czochralski-Grown Si Probed by Positron Annihilation
• Positron Annihilation in Vitreous Silica Glasses
• Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices
• Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
• Defects and Their Annealing Properties in B^+-Implanted Hg_Cd_Te Studied by Positron Annihilation
• A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
• Reversible Photodissociation of Hexacarbonyl Tungsten in Cross-Linked Polymers
• Annealing Properties of Defects in B^+- and F^+-Implanted Si Studied Using Monoenergetic Positron Beams
• Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
• Positron Annihilation in Germanium in Thermal Equilibrium at High Temperature
• Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
• Formation of Oxygen-Related Defects Enhanced by Fluorine in BF^+_2-Implanted Si Studied by a Monoenergetic Positron Beam
• Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam
• Oxygen-Related Defects Introduced by As^+-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams
• Investigation of Vacancy-Type Defects in P^+-Implanted 6H-SiC Using Monoenergetic Positron Beams
• Defects in TiN Films Probed by Monoenergetic Positron Beams
• Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams
• Defects in Heavily Phosphorus-Doped Si Epitaxial Films Probed by Monoenergetic Positron Beams
• 圧電トランスを用いた誘電体バリア放電型エキシマランプで観測される自己組織化現象
• 荷電粒子, 励起種, 解離種ならびに光子と原子分子ダイナミックス調査専門委員会
• Townsend's Secondary Ionization Coefficient of MgO Film in Ar and Electron Reflection at the Surface
• 第二部:純酸素を原料としたときのオゾン生成反応の特異現象について オゾンゼロ現象中にオゾンを注入したときの挙動 (特集 放電学会春季合同シンポジウム) -- (ワークショップ オゾナイザはどこまで進歩するか)
• 純酸素原料におけるオゾンの発生量の異常減少
• Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation
• Defects in Czochralski-Grown Silicon Crystals Investigated by Positron Annihilation
• Defects Introduced by Ar Plasma Exposure in GaAs Probed by Monoenergetic Positron Beam
• Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
• Compatibilization of Metallocene Polyethylene/Polyamide Blends with Maleic Anhydride Studied by Positron Annihilation
• Vacancy-Type Defects in Be-Implanted InP
• Free Volume in Polycarbonate Studied by Positron Annihilation : Effects of Free Radicals and Trapped Electrons on Positronium Formation : Structure and Mechanical and Thermal Properties of Condensed Matter
• Evaluation of SOI Substrates by Positron Annihilation
• Evaluation of SOI Substrates by Positron Annihilation
• The Anomalous Temperature Dependence of Positron Annihilation in Dilute Al-Li and Al-Mg Alloys
• Oxygen Clusters in Quenched Czochralski-Si Studied by Infrared Spectroscopy and Positron Annihilation
• Damage to the Silicon Substrate by Reactive Ion Etching Detected by a Slow Positron Beam
• 真空紫外(VUV)光用光導波路の開発とその応用
• 誘電体電極の二次電離係数 : —I. MgOのγ測定を目的とした放電路の観測と安定化—
• Reduction of Dislocation Density in Impurity-Doped GaAs Grown on Si Substrate by Molecular Beam Epitaxy
• Defects Induced by Wafer Processing and Thermal Treatment in InP Probed with Monoenergetic Positrons
• Positron Study of Vacancy-Type Defects Induced by Heavy Doping into MBE-Grown GaAs
• Homoepitaxial Growth of SrTiO_3 in an Ultrahigh Vacuum with Automatic Feeding of Oxygen from the Substrate at Temperatures as Low as 370℃ : Surfaces, Interfaces, and Films
• Defects in SiO_2 /Si Structures Probed by Using a Monoenergetic Positron Beam
• パルス気泡内放電によるフミン酸塩溶液の分解
• キシレンによるN_2(A^3Σ^+_u)の失活とキシレン分解生成物の陰極表面への付着による電流阻止作用
• 希ガスを満たした圧電トランス型放電プラズマ発生器で観測されるDBDの自己組織化現象
• 大気圧で動作する負イオン検出器を用いたO_2及びO_2/O_3混合ガス中における負イオン移動度測定
• オゾンの消滅過程 (特集 放電学会春のシンポジウム 環境改善技術の基礎と応用)
• キシレンによるN_2(A^3Σ^+_u)の失活レートと繰り返し測定による電流電圧特性の変化
• 圧電トランスを用いた誘電体バリア放電型プラズマリアクタの放電電力測定法
• 大気圧O_2中における数種類の負イオン移動度
• 簡易ダブルビーム法によるオゾン表面消滅率の測定

もっと見る 閉じる

スポンサーリンク