Defects and Their Annealing Properties in B^+-Implanted Hg_<0.78>Cd_<0.22>Te Studied by Positron Annihilation

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-03-15

著者

• Ebe Hiroji

  Nanoelectronics Collaborative Research Center (ncrc) Institute Of Industrial Science (iis) The Unive

• Ebe Hiroji

  Fujitsu Laboratories Ltd.

• TANIGAWA Shoichiro

  Institute of Materials Science, The University of Tsukuba

• UEDONO Akira

  Institute of Materials Science, University of Tsukuba

• Uedono A

  Univ. Tsukuba Tsukuba Jpn

• Uedono Akira

  Institute Of Applied Physics University Of Tsukuba

• Ebe H

  Univ. Tokyo Tokyo Jpn

• Tanaka M

  Production Engineering Research Laboratory Hitachi Ltd.

• Tanaka M

  Mitsubishi Electric Co. Ltd. Hyogo Jpn

• Tanaka Michiko

  Tokyo University Of Agiculture And Technology Department Of Biotechnology

• Tanaka M

  New Materials Research Center Sanyo Electric Co. Ltd.

• Miyamoto Yoshihiro

  Fujitsu Laboratories Ltd.

• Miyamoto Y

  Kyushu Univ. Fukuoka Jpn

• Yamamoto K

  Univ. Of Tsukuba

• Tanaka M

  Manufacturing Development Center Mitsubishi Electric Corporation

• Tanaka M

  Toshiba Corp. Kawasaki Jpn

• TANAKA Masahiro

  Fujitsu Laboratory Ltd.

• YAMAMOTO Kosaku

  Fujitsu Laboratory Ltd.

• Tanigawa Shoichiro

  Institute Of Applied Physics University Of Tsukuba

• Yamamoto K

  Kaneka Corporation

• Tanaka M

  Institute Of Multidisciplinary Research For Advanced Materials Tohoku University

• Tanigawa S

  Institute Of Applied Physics University Of Tsukuba

• Miyamoto Y

  Department Of Physical Electronics Tokyo Institute Of Technology

• Yamamoto K

  Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)

• Taino M

  Institute Of Multidisciplinary Research For Advanced Materials Tohoku University

• Matsuzaki T

  Department Of Applied Chemistry Faculty Of Engineering Himeji Institute Of Technology

• Yamamoto K

  Saga Univ. Saga Jpn

• Uedono Akira

  Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan

関連論文

• Local lattice parameter determination of a silicon (001) layer grown on a sapphire (1102) substrate using convergent-beam electron diffraction
• Lattice parameter determination of a composition controlled Si_Ge_x layer on a Si (001) substrate using convergent-beam electron diffraction
• Space-Group Determination of a New Superconductor (Nd_Ce_x)_2(Ba_Nd_y)_2Cu_3O_ using Convergent-Beam Electron Diffraction
• Space-Group Determination of a New Superconductor (Nd_Sr_Ce_)_2CuO_ Using Convergent-Beam Electron Diffraction
• Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
• Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots : Semiconductors
• Characterization of Diamond Films by Means of a Pulsed Positron Beam
• Characterization of Diamond Films Synthesized on Si from a Gas Phase in Microwave Plasma by Slow Positrons
• Study on Momentum Density of Electrons and Fermi Surface in Niobium by Positron Annihilation
• Lattice parameter determination of a strained area of an InAs layer on a GaAs substrate using CBED
• Defect Production in Phosphorus Ion-Implanted SiO_2(43 nm)/Si Studied by a Variable-Energy Positron Beam
• Vacancy-Type Defects in As^+-Implanted SiO_2(43 nm)/Si Proved with Slow Positrons
• Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
• Positron Annihilation in Proton Irradiated Czochralski-Grown Si
• Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams
• Site-Specific Studies on X-Ray Magnetic Circular Dichroism at Fe K Edge for Transition-Metal Ferrites
• X-Ray Diffuse Scattering Study of Magnetite by the Valence-Difference Contrast Method
• Controlling Polarization of 1.55-μm Columnar InAs Quantum Dots with Highly Tensile-Strained InGaAsP Barriers on InP(001)
• Automatically-Controlled C-Band Wavelength Conversion with Constant Output Power Based on Four-Wave Mixing in SOA's(Lasers, Quantum Electronics)
• Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-μm P-Doped Quantum-Dot Lasers without Current Adjustments
• Control of In_xGa_As Capping Layer Induced Optical Polarization in Edge-Emitting Photoluminescence of InAs Quantum Dots
• Proposal of a Next-Generation Super Resolution Technique
• Photolithography System Using Modified Illumination
• Photolithography System Using a Combination of Modified Illumination and Phase Shift Mask
• Photolithography System Using Annular Illumination : Photolithography
• Photolithography System Using Annular Illumination
• Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy
• Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams
• Improvement of n-Type Poly-Si Film Properties by Solid Phase Crystallization Method
• Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)
• Defects in Metalorganic Chemical Vapor Deposition Epitaxy-Grown ZnSe Films on GaAs Investigated by Monoenergetic Positrons
• The Defect Characterization of Heavily Si-doped Molecular Beam Epitaxy-Grown GaAs by the Monoenergetic Positron Method
• Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
• Variable-Energy Positron Studies of Vacancy-Type Defects in TiN Films on Si
• Amorphization Processes and Structural Relaxation in Ion Implanted Si
• Characterization of Column III Vacancies in Al_xGa_As/GaAs Heterostructures Grown by Molecular Beam Epitaxy through Slow Positrons
• Silicide-Formation-Induced Defects in Si Substrates in Ti/Si and Ni/Si Systems by a Monoenergetic Positron Beam
• Effect of Annealing Method on Vacancy-Type Defects in Si-Implanted GaAs Studied by a Slow Positron Beam
• The Effect of Surface Oxides on the Creation of Point Defects in GaAs Studied by Slow Positron Beam
• Defect Evaluation of Heavily P-Doped Si Epitaxial Films Grown at Low Temperature
• Identification of Vacancy-Type Defects in Molecular Beam Epitaxy-Grown GaAs Using a Slow Positron Beam
• Effects of the Fermi Level on Defects in Be^+-Implanted GaAs Studied by a Monoenergetic Positron Beam
• Electron Diffraction Study of Ba_2YCu_3O_(y=0.1-0.2)
• Study of Point Defects in Bulk ZnSe Grown by Nonstoichiometric Annealing
• Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
• Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
• Oxygen Microclusters in Czochralski-Grown Si Probed by Positron Annihilation
• Positron Annihilation in Vitreous Silica Glasses
• Absolute Measurement of Lattice Spacing d(220)in Floating Zone Silicon Crystal
• Absolute Measurement of Lattice Spacing d(220) Silicon Crystal in Floating Zone
• Sub-Nanometer Scale Measurements of Silicon Oxide Thickness by Spectroscopic Ellipsometry
• Sub-Nanometer Scale Measurements of Silicon Oxide Thickness by Spectroscopic Ellipsometry
• Development of Stable a-Si Solar Cells with Wide-Gap a-Si:H i-layers Deposited by an Inert Gas Plasma Treatment Method
• Improvement in a-Si:H Properties by Inert Gas Plasma Treatment
• Practical Simulation of the I-V Curve for Amorphous-Silicon-Based Multijunction Solar Cells after Light Soaking
• Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices
• Aggregation of Monocrystalline β-FeSi_2 by Annealing and by Si Overlayer Growth
• Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
• Defects and Their Annealing Properties in B^+-Implanted Hg_Cd_Te Studied by Positron Annihilation
• A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
• Reversible Photodissociation of Hexacarbonyl Tungsten in Cross-Linked Polymers
• Annealing Properties of Defects in B^+- and F^+-Implanted Si Studied Using Monoenergetic Positron Beams
• Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
• Positron Annihilation in Germanium in Thermal Equilibrium at High Temperature
• Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
• Formation of Oxygen-Related Defects Enhanced by Fluorine in BF^+_2-Implanted Si Studied by a Monoenergetic Positron Beam
• Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam
• Oxygen-Related Defects Introduced by As^+-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams
• Investigation of Vacancy-Type Defects in P^+-Implanted 6H-SiC Using Monoenergetic Positron Beams
• Defects in TiN Films Probed by Monoenergetic Positron Beams
• Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams
• Defects in Heavily Phosphorus-Doped Si Epitaxial Films Probed by Monoenergetic Positron Beams
• Magnetic Shielding by Superconducting Y-Ba-Cu-O Prepared by the Modified Quench and Melt Growth (QMG) Process
• High Magnetic Flux Trapping by Melt-Grown YBaCuO Superconductors
• Effect of Pt Addition on Melt-Processed YBaCuO Superconductors
• Critical Current Characteristics in Superconducting Y-Ba-Cu-O Prepared by the Melt Process
• Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation
• Defects in Czochralski-Grown Silicon Crystals Investigated by Positron Annihilation
• Defects Introduced by Ar Plasma Exposure in GaAs Probed by Monoenergetic Positron Beam
• Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
• Intensity Variation of Transition Radiation Induced by Adsorption of Nitrogen on W(100) Surface
• Emission of Radiation Induced by Bombardment of Slow Electrons from a Clean (100) Surface of Tungsten
• Nonlinear Optical Properties of CdTe Microcrystallites in CaF_2 Thin Film
• Compatibilization of Metallocene Polyethylene/Polyamide Blends with Maleic Anhydride Studied by Positron Annihilation
• Vacancy-Type Defects in Be-Implanted InP
• Free Volume in Polycarbonate Studied by Positron Annihilation : Effects of Free Radicals and Trapped Electrons on Positronium Formation : Structure and Mechanical and Thermal Properties of Condensed Matter
• Evaluation of SOI Substrates by Positron Annihilation
• Evaluation of SOI Substrates by Positron Annihilation
• The Anomalous Temperature Dependence of Positron Annihilation in Dilute Al-Li and Al-Mg Alloys
• Oxygen Clusters in Quenched Czochralski-Si Studied by Infrared Spectroscopy and Positron Annihilation
• Damage to the Silicon Substrate by Reactive Ion Etching Detected by a Slow Positron Beam
• Characterization of Grown-in Dislocations in Benzophenone Single Crystals by X-Ray Topography
• Reduction of Dislocation Density in Impurity-Doped GaAs Grown on Si Substrate by Molecular Beam Epitaxy
• Defects Induced by Wafer Processing and Thermal Treatment in InP Probed with Monoenergetic Positrons
• Positron Study of Vacancy-Type Defects Induced by Heavy Doping into MBE-Grown GaAs
• Homoepitaxial Growth of SrTiO_3 in an Ultrahigh Vacuum with Automatic Feeding of Oxygen from the Substrate at Temperatures as Low as 370℃ : Surfaces, Interfaces, and Films
• Defects in SiO_2 /Si Structures Probed by Using a Monoenergetic Positron Beam
• Controlling Polarization in Quantum-dot Semiconductor Optical Amplifiers
• Slow Positron Beam Apparatus for Surface and Subsurface Analysis of Samples in Air
• Controlling Polarization of 1.55-μm Columnar InAs Quantum Dots with Highly Tensile-Strained InGaAsP Barriers on InP(001)

もっと見る 閉じる

スポンサーリンク