Defects Induced by Wafer Processing and Thermal Treatment in InP Probed with Monoenergetic Positrons
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概要
- 論文の詳細を見る
Variable-energy positron-beam studies have been made on InP single crystals. Doppler broadening profiles of the positron annihilation and the mean diffusion length of positrons were found to be sensitive to defects under the subsurface region. For a specimen after high-quality polishing, vacancy-type defects with a concentration of 10^<18> cm^<-3> were observed in the range of 0〜400 nm. For the specimen after heat treatment, a damaged layer introduced by dephosphorization was observed. An overlayer containing monovacancies, with a thickness of 140 nm, was found to be formed after 450℃ annealing.
- 社団法人応用物理学会の論文
- 1990-05-20
著者
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TANIGAWA Shoichiro
Institute of Materials Science, The University of Tsukuba
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UEDONO Akira
Institute of Materials Science, University of Tsukuba
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Uedono Akira
Institute Of Applied Physics University Of Tsukuba
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Uedono Akira
Institute Of Materials Science University Of Tsukuba:(present Address)department Of Physics Yokohama
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Tanigawa Shoichiro
Institute Of Applied Physics University Of Tsukuba
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Tanigawa Shoichiro
Institute Of Materials Science University Of Tsukuba
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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