A Study of Vacancy-Type Defects in B+-Implanted SiO2/Si by a Slow Positron Beam
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概要
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Variable-energy ($0\sim 30$ keV) positron beam studies have been carried out on 80 keV B+-implanted SiO2(43 nm)/Si specimens. Doppler broadening profiles of the positron annihilation as a function of the incident positron energy were shown to be quite sensitive for the detection of vacancy-type defects introduced by B+-implantation. The average depth of the defected regions was found to shift towards the surface of the specimen with increasing the dose of B+ ions. This effect is attributed to the accumulation of vacancy-type defects at the SiO2/Si interface. Dominant defect species were identified as vacancy clusters by their annealing stage.
- 公益社団法人 応用物理学会の論文
- 1989-08-20
著者
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Sugiura Jun
Device Development Center Hitachi Ltd.
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Ogasawara Makoto
Device Development Center Hitachi Ltd.
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Tanigawa Shoichiro
Institute Of Applied Physics University Of Tsukuba
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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Uedono Akira
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305
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Tanigawa Shoichiro
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305
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