Impact of Residual Impurities on Annealing Properties of Vacancies in Electroplated Cu Studied Using Monoenergetic Positron Beams
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概要
- 論文の詳細を見る
Positron annihilation was used to probe vacancies in Cu films deposited by Ta/SiO2/Si using electroplating and sputtering techniques. During room temperature grain growth (i.e., self-annealing) of the Cu films, two different types of vacancies (small vacancy clusters such as divacancies and large vacancy agglomerates) were introduced into grains; the formation of such defects was enhanced by residual impurities. For electroplated Cu, isochronal annealing experiments revealed further agglomeration of vacancies when annealing was done below 300 °C, and these agglomerates started to dissociate above 350 °C. The effect of impurities on the vacancy agglomerates disappeared in the defect recovery stage ($\geq 350$ °C).
- Japan Society of Applied Physicsの論文
- 2007-06-25
著者
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Ohdaira Toshiyuki
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Kaneko Hisashi
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Uedono Akira
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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Mori Kazuteru
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Ito Kenichi
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Imamizu Kentarou
Process and Manufacturing Engineering Center, Toshiba Co., Isogo-ku, Yokohama 235-8522, Japan
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Hachiya Takayo
Process and Manufacturing Engineering Center, Toshiba Co., Isogo-ku, Yokohama 235-8522, Japan
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Kamijo Hiroyuki
Process and Manufacturing Engineering Center, Toshiba Co., Isogo-ku, Yokohama 235-8522, Japan
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Hasunuma Masahiko
Process and Manufacturing Engineering Center, Toshiba Co., Isogo-ku, Yokohama 235-8522, Japan
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Toyoda Hiroshi
Process and Manufacturing Engineering Center, Toshiba Co., Isogo-ku, Yokohama 235-8522, Japan
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Suzuki Ryouichi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Ohdaira Toshiyuki
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Kaneko Hisashi
Process and Manufacturing Engineering Center, Toshiba Co., Isogo-ku, Yokohama 235-8522, Japan
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