Characterization of Low-$k$/Cu Damascene Structures Using Monoenergetic Positron Beams
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概要
- 論文の詳細を見る
Defects in SiOCH/Cu damascene structures were probed using monoenergetic positron beams. Doppler broadening spectra of the annihilation radiation and positron lifetime spectra were measured for samples patterned with 0.54- and 2.16-μm pitches. An analysis using the lineshape parameters $S$ and $W$ was shown to provide useful information about pores and vacancies in materials buried in the damascene structure. The lifetime and intensity of positronium trapped by pores in SiOCH were decreased by the scaling, which was attributed to the shrinkage of pores and an introduction of electron/hole traps by the fabrication process of the damascene structure.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-12-25
著者
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Eguchi Kazuhiro
Semiconductor Company Toshiba Corporation
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Yoshimaru Masaki
Semiconductor R&d Division Semiconductor Business Group Oki Electric Industry Co. Ltd.
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Uedono Akira
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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Inoue Naoya
Semiconductor Technology Academic Research Center, Kohoku, Yokohama 222-0033, Japan
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Hayashi Yoshihiro
Semiconductor Technology Academic Research Center, Kohoku, Yokohama 222-0033, Japan
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Hirose Yukinori
Semiconductor Technology Academic Research Center, Kohoku, Yokohama 222-0033, Japan
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Nakamura Tomoji
Semiconductor Technology Academic Research Center, Kohoku, Yokohama 222-0033, Japan
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Oshima Nagayasu
Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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Ohdaira Toshiyuki
Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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Suzuki Ryoichi
Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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Nakamura Tomoji
Semiconductor Technology Academic Research Center, 17-2 Shin Yokohama 3-chome, Kohoku, Yokohama 222-0033, Japan
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Yoshimaru Masaki
Semiconductor Technology Academic Research Center, Kohoku, Yokohama 222-0033, Japan
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Eguchi Kazuhiro
Semiconductor Technology Academic Research Center, Kohoku, Yokohama 222-0033, Japan
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Oshima Nagayasu
Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Suzuki Ryoichi
Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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